公开(公告)号：US09352431B2

公开(公告)日：2016-05-31

申请号：US13580322

申请日：2011-02-22

申请人： Joerg Palm ,  Stefan Jost ,  Martin Fuerfanger ,  Jessica Hartwich

发明人： Joerg Palm ,  Stefan Jost ,  Martin Fuerfanger ,  Jessica Hartwich

IPC分类号： B23Q3/00 ,  C23C16/458 ,  H01L21/67 ,  H01L21/673 ,  H01L31/18

CPC分类号： B23Q3/00 ,  C23C16/4582 ,  H01L21/67109 ,  H01L21/67346 ,  H01L21/67353 ,  H01L21/67383 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/49998

摘要： A device for forming a reduced chamber space, which is a process box or a process hood, containing an apparatus, which positions at least two multilayer bodies each including a surface to be processed, wherein the apparatus is designed such that the multilayer bodies are opposite to each other, wherein the surfaces to be processed are facing away from each other such that the multilayer bodies can be processed as a multilayer body arrangement in a processing system. In addition, a method for positioning the two multilayer bodies comprising a surface to be processed, with the two multilayer bodies disposed in such a device such that multilayer bodies are opposite each other, wherein the surfaces to be processed are facing away from each other, such that the multilayer bodies are processable as a multilayer body arrangement in a processing system.

摘要翻译： 一种用于形成减压室空间的装置，其是包含装置的处理箱或加工罩，所述装置定位至少两个包括待处理表面的多层体，其中，所述装置被设计成使得所述多层体相对 其中待处理的表面彼此背离，使得多层体可以在处理系统中作为多层体排列处理。 另外，一种用于定位包括待处理表面的两个多层体的方法，其中两个多层体设置在这种装置中，使得多层体彼此相对，其中待处理的表面彼此背离， 使得多层体在处理系统中可作为多层体排列。

公开(公告)号：US20130029479A1

公开(公告)日：2013-01-31

申请号：US13580383

申请日：2011-02-22

申请人： Stefan Jost ,  Joerg Palm ,  Martin Fuerfanger

发明人： Stefan Jost ,  Joerg Palm ,  Martin Fuerfanger

IPC分类号： B05C9/14 ,  H01L21/205

CPC分类号： H01L21/67346 ,  C23C16/4583 ,  H01L21/67109 ,  H01L21/67353 ,  H01L21/67383 ,  H01L31/0322 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The invention relates to a multilayer body arrangement, which comprises at least two multilayer bodies each having at least one surface to be processed as well as at least one device for positioning the multilayer bodies, wherein the device is configured such that the respective surfaces to be processed are opposite each other and thus form a quasi-closed processing space disposed between the surfaces, in which the processing occurs. It further relates to a system for processing multilayer bodies with such a multilayer body arrangement, as well as a method for processing multilayer bodies, wherein the multilayer bodies are disposed such that the respective surfaces to be processed are opposite each other and thus form a quasi-closed processing space disposed between the surfaces, in which the processing occurs.

摘要翻译： 本发明涉及一种多层体装置，其包括至少两个多层体，每个至少一个多层体具有至少一个要加工的表面以及至少一个用于定位多层体的装置，其中该装置构造成使得各个表面为 处理的物体彼此相对，从而形成设置在处理发生的表面之间的准封闭处理空间。 本发明还涉及一种用于处理具有这种多层体结构的多层体的系统，以及一种用于处理多层体的方法，其中多层体被设置成使得待处理的各个表面彼此相对，从而形成准 封闭的处理空间设置在处理发生的表面之间。

公开(公告)号：US09236282B2

公开(公告)日：2016-01-12

申请号：US13580383

申请日：2011-02-22

申请人： Stefan Jost ,  Joerg Palm ,  Martin Fuerfanger

发明人： Stefan Jost ,  Joerg Palm ,  Martin Fuerfanger

IPC分类号： H01L21/00 ,  H01L21/673 ,  C23C16/458 ,  H01L21/67 ,  H01L31/032 ,  H01L31/18

CPC分类号： H01L21/67346 ,  C23C16/4583 ,  H01L21/67109 ,  H01L21/67353 ,  H01L21/67383 ,  H01L31/0322 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The invention relates to a multilayer body arrangement, which comprises at least two multilayer bodies each having at least one surface to be processed as well as at least one device for positioning the multilayer bodies, wherein the device is configured such that the respective surfaces to be processed are opposite each other and thus form a quasi-closed processing space disposed between the surfaces, in which the processing occurs. It further relates to a system for processing multilayer bodies with such a multilayer body arrangement, as well as a method for processing multilayer bodies, wherein the multilayer bodies are disposed such that the respective surfaces to be processed are opposite each other and thus form a quasi-closed processing space disposed between the surfaces, in which the processing occurs.

摘要翻译： 本发明涉及一种多层体装置，其包括至少两个多层体，每个至少一个多层体具有至少一个要加工的表面以及至少一个用于定位多层体的装置，其中该装置构造成使得各个表面为 处理的物体彼此相对，从而形成设置在处理发生的表面之间的准封闭处理空间。 本发明还涉及一种用于处理具有这种多层体结构的多层体的系统，以及一种用于处理多层体的方法，其中多层体被设置成使得待处理的各个表面彼此相对，从而形成准 封闭的处理空间设置在处理发生的表面之间。

公开(公告)号：US20130067723A1

公开(公告)日：2013-03-21

申请号：US13580322

申请日：2011-02-22

申请人： Joerg Palm ,  Stefan Jost ,  Martin Fuerfanger ,  Jessica Hartwich

发明人： Joerg Palm ,  Stefan Jost ,  Martin Fuerfanger ,  Jessica Hartwich

IPC分类号： B23Q3/00

CPC分类号： B23Q3/00 ,  C23C16/4582 ,  H01L21/67109 ,  H01L21/67346 ,  H01L21/67353 ,  H01L21/67383 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/49998

摘要： A device for forming a reduced chamber space, which is a process box or a process hood, containing an apparatus, which positions at least two multilayer bodies each including a surface to be processed, wherein the apparatus is designed such that the multilayer bodies are opposite to each other, wherein the surfaces to be processed are facing away from each other such that the multilayer bodies can be processed as a multilayer body arrangement in a processing system. In addition, a method for positioning the two multilayer bodies comprising a surface to be processed, with the two multilayer bodies disposed in such a device such that multilayer bodies are opposite each other, wherein the surfaces to be processed are facing away from each other, such that the multilayer bodies are processable as a multilayer body arrangement in a processing system.

摘要翻译： 一种用于形成减压室空间的装置，其是包含装置的处理箱或加工罩，所述装置定位至少两个包括待处理表面的多层体，其中，所述装置被设计成使得所述多层体相对 其中待处理的表面彼此背离，使得多层体可以在处理系统中作为多层体排列处理。 另外，一种用于定位包括待处理表面的两个多层体的方法，其中两个多层体设置在这种装置中，使得多层体彼此相对，其中待处理的表面彼此背离， 使得多层体在处理系统中可作为多层体排列。

公开(公告)号：US08187377B2

公开(公告)日：2012-05-29

申请号：US10264393

申请日：2002-10-04

申请人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

发明人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

IPC分类号： C30B33/00

CPC分类号： H01L21/3065 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02658

摘要： The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.

摘要翻译： 本发明提供用于处理半导体材料的表面。 该方法包括在高温下在氢气环境中将半导体材料的表面暴露于卤素蚀刻剂。 该方法控制半导体材料的表面粗糙度。 该方法还具有减少半导体材料中位错的意想不到的好处。