利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

40 条记录 (耗时 0.028 秒)

    Long array photoelectric converting apparatus with reduced crosstalk
    6.
    发明授权
    Long array photoelectric converting apparatus with reduced crosstalk 失效
    具有减少串扰的长阵列光电转换装置

    公开(公告)号：US4916326A

    公开(公告)日：1990-04-10

    申请号：US396760

    申请日：1989-08-22

    申请人： Katsunori Hatanaka ,  Yoshinori Isobe ,  Toshihiro Saika ,  Katsumi Nakagawa

    发明人： Katsunori Hatanaka ,  Yoshinori Isobe ,  Toshihiro Saika ,  Katsumi Nakagawa

    IPC分类号： H01L27/146 ,  H01L31/07 ,  H04N5/359 ,  H04N5/369

    CPC分类号： H04N3/1581 ,  H01L27/14665

    摘要： There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.

    摘要翻译： 存在一种光电转换装置，其中以一维阵列形式布置的（NxM）光电转换元件以矩阵形式连接到N个施加电压和M个信号读出电极。 在该装置中，矩阵连接的布线交叉部分设置在施加电压的一侧，并且布线交叉部分的绝缘通过光电导层和高电阻层形成为层叠结构。

    Long array photoelectric converting apparatus with insulated matrix wiring
    7.
    发明授权
    Long array photoelectric converting apparatus with insulated matrix wiring 失效
    具有绝缘矩阵布线的长阵列光电转换装置

    公开(公告)号：US4788445A

    公开(公告)日：1988-11-29

    申请号：US5767

    申请日：1987-01-21

    申请人： Katsunori Hatanaka ,  Yoshinori Isobe ,  Toshihiro Saika ,  Katsumi Nakagawa

    发明人： Katsunori Hatanaka ,  Yoshinori Isobe ,  Toshihiro Saika ,  Katsumi Nakagawa

    IPC分类号： H01L27/146 ,  H04N5/369 ,  H01J40/14 ,  H01L27/14

    CPC分类号： H01L27/14665 ,  H04N3/1581

    摘要： There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.

    摘要翻译： 存在一种光电转换装置，其中以一维阵列形式布置的（NxM）光电转换元件以矩阵形式连接到N个施加电压和M个信号读出电极。 在该装置中，矩阵连接的布线交叉部分设置在施加电压的一侧，并且布线交叉部分的绝缘通过光电导层和高电阻层形成为层叠结构。

    Image recording device having a conductive layer formed below a light receiving window
    8.
    发明授权
    Image recording device having a conductive layer formed below a light receiving window 失效
    具有形成在光接收窗口下方的导电层的图像记录装置

    公开(公告)号：US4916304A

    公开(公告)日：1990-04-10

    申请号：US290805

    申请日：1988-12-23

    申请人： Satoshi Itabashi ,  Toshihiro Saika ,  Ihachiro Gofuku

    发明人： Satoshi Itabashi ,  Toshihiro Saika ,  Ihachiro Gofuku

    IPC分类号： H01L27/14 ,  H01L31/0216 ,  H01L31/09 ,  H04N1/031

    CPC分类号： H04N1/0315 ,  H01L31/02164 ,  H01L31/09 ,  H01L31/095 ,  H04N1/0313 ,  H04N1/0316 ,  H04N1/0318 ,  H04N3/1512 ,  H04N3/1581 ,  H04N2201/02497 ,  H04N2201/03112

    摘要： A photosensor having an electrically insulating, translucent substrate; an opaque conductive layer formed on the substrate; an insulating layer formed on the conductive layer, and a semiconductive layer formed on the insulating layer for receiving light and providing a current corresponding thereto. A pair of electrodes are formed in contact with the semiconductor layer and define a light receiving window therebetween. The electrodes are formed so as to not substantially overlap the conductive layer. The conductive layer is supplied with a bias voltage corresponding to a polarity and an amount of carriers defining the current of the semiconductor layer and a voltage Va of a small absolute value during a non-reading period of the photosensor.

    摘要翻译： 具有电绝缘，透光性基板的光电传感器; 形成在所述基板上的不透明导电层; 形成在导电层上的绝缘层，以及形成在绝缘层上的用于接收光并提供与其对应的电流的半导体层。 一对电极形成为与半导体层接触并在其间限定光接收窗口。 电极形成为基本上不覆盖导电层。 在光传感器的非读取期间，向导电层提供对应于极性的偏置电压和限定半导体层的电流的载流子的量和绝对值小的电压Va。

    Image reading device having a conductive layer formed below a light receiving window
    9.
    发明授权
    Image reading device having a conductive layer formed below a light receiving window 失效
    具有形成在光接收窗口下方的导电层的图像读取装置

    公开(公告)号：US5128532A

    公开(公告)日：1992-07-07

    申请号：US655279

    申请日：1991-02-14

    申请人： Satoshi Itabashi ,  Toshihiro Saika ,  Ihachiro Gofuku

    发明人： Satoshi Itabashi ,  Toshihiro Saika ,  Ihachiro Gofuku

    IPC分类号： H01L27/14 ,  H01L31/0216 ,  H01L31/09 ,  H04N1/031

    CPC分类号： H04N1/0315 ,  H01L31/02164 ,  H01L31/09 ,  H01L31/095 ,  H04N1/0313 ,  H04N1/0316 ,  H04N1/0318 ,  H04N3/1512 ,  H04N3/1581 ,  H04N2201/02497 ,  H04N2201/03112

    摘要： A photosensor having an electrically insulating, translucent substrate; an opaque conductive layer formed on the substrate; and insulating layer formed on the conductive layer, and a semiconductive layer formed on the insulating layer for receiving light and providing a current corresponding thereto. A pair of electrodes are formed in contact with the semiconductor layer and define a light receiving window therebetween. The electrodes are formed so as to not substantially overlap the conductive layer. The conductive layer is supplied with a bias voltage corresponding to a polarity and an amount of carriers defining the current of the semiconductor layer and a voltage Va of a small absolute value during a non-reading period of the photosensor.

    摘要翻译： 具有电绝缘，透光性基板的光电传感器; 形成在所述基板上的不透明导电层; 以及形成在导电层上的绝缘层，以及形成在绝缘层上的用于接收光并提供与其相对应的电流的半导体层。 一对电极形成为与半导体层接触并在其间限定光接收窗口。 电极形成为基本上不覆盖导电层。 在光传感器的非读取期间，向导电层提供对应于极性的偏置电压和限定半导体层的电流的载流子的量和绝对值小的电压Va。

    Image reading device with voltage biases
    10.
    发明授权
    Image reading device with voltage biases 失效
    具有电压偏差的图像读取装置

    公开(公告)号：US5097304A

    公开(公告)日：1992-03-17

    申请号：US613449

    申请日：1990-11-14

    申请人： Satoshi Itabashi ,  Toshihiro Saika ,  Ihachiro Gofuku

    发明人： Satoshi Itabashi ,  Toshihiro Saika ,  Ihachiro Gofuku

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14665 ,  H01L27/14678

    摘要： An image reading device has photo-sensor units arranged in the form of an array constituting a line sensor. Each sensor unit includes a light-shielding layer formed on a light-transmitting substrate, an insulating layer formed on the light-shielding layer, a semiconductor layer disposed on the insulating layer, and a pair of upper electrodes provided on the semiconductor layer and spaced from each other. The space between the upper electrodes constitutes a light-receiving window through which the semiconductor layer receives light applied from the reverse side of the substrate onto the surface of an image-carrying original and reflected by the original. Thus, the semiconductor layer produces an electric signal representing the read image. The light-shielding layer is made of an electrically conductive material such as a metal. A voltage application circuit is provided for applying to the light-shielding electrode a voltage of a level which is lower than the levels of voltages applied to the pair of upper electrodes. The level of the voltage may be varied along the length of the array of the photo-sensor units.

    摘要翻译： 图像读取装置具有以构成线传感器的阵列的形式配置的光传感器单元。 每个传感器单元包括形成在透光基板上的遮光层，形成在遮光层上的绝缘层，设置在绝缘层上的半导体层，以及设置在半导体层上并隔开的一对上电极 从彼此。 上部电极之间的空间构成受光窗口，半导体层通过该窗口接收从基板的背面施加到图像载体的表面上并由原稿反射的光。 因此，半导体层产生表示读取图像的电信号。 遮光层由诸如金属的导电材料制成。 提供电压施加电路，用于向遮光电极施加低于施加到一对上电极的电压的电平的电平。 电压的电平可以沿着光电传感器单元阵列的长度变化。