摘要:
There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
摘要:
There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
摘要:
A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.
摘要:
A matrix circuit has a plurality of blocks each including a plurality of semiconductor unit elements, the semiconductor unit elements of each block being adapted to be impressed with a predetermined voltage at the same time, each unit element becoming active when impressed with the predetermined voltage, and a drive device for impressing the predetermined voltage to the plurality of blocks sequentially. The matrix circuit includes a first selective device for selecting either ground or a desired other than ground voltage, and a second selective device for selecting one of the output of the drive device and the output of the first selective device whereby the output of the second selective device renders active the plurality of unit elements of each block.
摘要:
A photoconductive type sensor which comprises a photoconductive layer having a photosensing region. A pair of main electrodes are provided which are disposed on the photosensing region of the photoconductive layer. The sensor also comprises a gate electrode for applying a bias voltage to the photosensing region. The gate electrode provides a bias of one polarity so as to suppress the generation of a channel in the photosensing region.
摘要:
A photoelectric conversion apparatus includes light reception elements which are rendered enabled under application of voltage; a first memory section for storing outputs from the light reception elements in the enabled state; a second memory section for storing outputs from the light reception elements in a disabled state; and an arithmetic operation circuit for correcting the contents of the first memory section in accordance with the contents of the second memory section.