摘要:
A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.
摘要翻译:磁性隧道结(MTJ)单元包括具有低磁矩的自由磁性层,磁性随机存取存储器(MRAM)包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极,下磁层,隧道层,上磁层和上电极。 上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比,并且自由磁性层可具有约800emu / cm 3以下的磁矩。
摘要:
Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.
摘要:
Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.
摘要:
Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.
摘要:
A magneto-optical recording medium, which comprises a thin film constituted of an amorphous alloy (R.sub.x TM.sub.1-x).sub.1-y A.sub.y (where the element material R is at least one rare earth element, the element material TM at least one 3d transition metal and the element material A at least one semi-metal-semiconductor element) and having an easy axis of magnetization in a direction perpendicular to the film surface, the atomic ratio being 0.15.ltoreq.xx.ltoreq.0.35 and 0.00
摘要:
A magnetic thin film is disclosed which has a composition represented substantially by the following chemical formula and, the same time, has the whole or part of the thin film formed of an amorphous region: {(Fe.sub.1-x Co.sub.x).sub.1-y (B.sub.1-z X.sub.z).sub.y }.sub.1-a RE.sub.awherein X represents at least one element selected from among the Group 4B elements in the CAS version of the Periodic Table, RE represents rare earth elements including Sm, and x, y, z, and a represent numerical values satisfying the following expressions, 0
摘要翻译:公开了一种磁性薄膜,其具有基本上由以下化学式表示的组成,并且同时具有由非晶区形成的全部或部分薄膜:{(Fe1-xCox)1-y(B1- zXz)y} 1-a REA,其中X表示选自元素周期表的CAS版本的4B族元素中的至少一种元素,RE表示稀土元素,包括Sm,x,y,z,a表示满足 0
摘要:
An alloy target for making a magneto-optical recording medium by sputtering comprises an alloy containing 10 to 50 atom % of at least one rare earth element selected from among Sm, Nd, Gd, Tb, Dy, Ho, Tm and Er, with a balance consisting substantially of at least one transition metal selected from among Co, Fe and Ni. The alloy has a mixed structure composed of at least three phases of intermetallic compounds formed by the rare earth element and the transition metal.
摘要:
A magneto optical thin film recording medium is disclosed having very high carrier-to-noise ratios and high rotation angles. A transmission electron microscope photomicrograph (at 200,000 X) of one such medium is shown in FIG. 1. These are multi-phase amorphous materials having magnetic anisotropy perpendicular to the plane of the thin film. They are produced in a triode vacuum sputtering process at vacuums in the range of 4.times.10.sup.-3 to 6.times.10.sup.-4 Torr. By adjusting process parameters such as substrate temperature, anode bias and deposition rate, the properties of the thin film can be altered.
摘要:
A magneto-optical recording medium comprising a layer of amorphous rare-earth-transition-metal alloy having a uniaxial magnetic anisotropy, the alloy containing germanium as additive, and the recording medium having high crystallization temperature, enough stability and good reading S/N ratio.
摘要:
A magnetoresistive film of a structure comprising a non-magnetic film being put between magnetic films. At least one of the magnetic films is a perpendicular magnetic anisotropy film including a rate earth metal, Fe and Co as main ingredients. And, composition of Co to Fe and Co is within a range from 8 atomic percent to 97 atomic percent both inclusive. A memory comprises a plurality of magnetoresistive films described in the above as memory elements; unit for recording information in the magnetoresistive films; and unit for reading the information recorded in the magnetoresistive films.