公开(公告)号：US20150380530A1

公开(公告)日：2015-12-31

申请号：US14848355

申请日：2015-09-09

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Chih-Chieh Hsu ,  Hsiao-Chiang Yao ,  Chu-Yin Hung

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract translation: 半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。 第一绝缘层覆盖栅极和第一电极。 有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。 第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。 源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。 第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。

公开(公告)号：US12087612B2

公开(公告)日：2024-09-10

申请号：US17482409

申请日：2021-09-22

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Wei-Hung Kuo ,  Chu-Li Chao ,  Chu-Yin Hung ,  Yu-Hsiang Chang

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L21/6835 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.

公开(公告)号：US20220367230A1

公开(公告)日：2022-11-17

申请号：US17482409

申请日：2021-09-22

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Wei-Hung Kuo ,  Chu-Li Chao ,  Chu-Yin Hung ,  Yu-Hsiang Chang

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62

Abstract: A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.

公开(公告)号：US09553176B2

公开(公告)日：2017-01-24

申请号：US14848355

申请日：2015-09-09

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Chih-Chieh Hsu ,  Hsiao-Chiang Yao ,  Chu-Yin Hung

IPC: H01L21/336 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract translation: 半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。 第一绝缘层覆盖栅极和第一电极。 有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。 第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。 源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。 第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。