公开(公告)号：US20180182877A1

公开(公告)日：2018-06-28

申请号：US15608949

申请日：2017-05-30

Applicant: Industrial Technology Research Institute

Inventor： Li-Heng Lee ,  Yu-Sheng Chen

IPC: H01L29/778 ,  H01L21/8238 ,  H01L29/423 ,  H01L21/02

CPC classification number: H01L21/02389 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/3083 ,  H01L21/8258 ,  H01L27/085 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor structure is provided. The semiconductor structure includes a silicon substrate having a groove, an epitaxial layer disposed on the sidewalls of the groove, and a gate disposed above the epitaxial layer and electrically connected to the epitaxial layer. The sidewalls of the groove have a lattice direction of (111). The groove extends in a first direction. The semiconductor structure and its fabrication method make a complementary metal oxide semiconductor (CMOS) circuit and a high electron mobility transistor (HEMT) with high electron mobility, high breakdown voltage and heat resistance properties being capable of being integrated on the same silicon (100) substrate at the same time to enhance the ability of the system on chip to handle power and RF power signals.