公开(公告)号：US20130292769A1

公开(公告)日：2013-11-07

申请号：US13935573

申请日：2013-07-05

Applicant: Infineon Technologies AG

Inventor： Joerg Berthold ,  Christian Pacha ,  Klaus von Arnim

IPC: H01L27/12

CPC classification number: G11C11/412 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/04 ,  H01L29/785

Abstract: One or more embodiments relate to an apparatus comprising: a first transistor including a channel in a fin; and a second transistor including a channel in a fin, the channel of the first transistor being doped with a first dopant of a first polarity and counter-doped with a second dopant of a second polarity opposite to the first polarity, a concentration of the first dopant being approximately equal to a concentration of the second dopant, wherein the first transistor and the second transistor are of a same conductivity type.

Abstract translation: 一个或多个实施例涉及一种装置，包括：第一晶体管，其包括翅片中的通道; 以及第二晶体管，其包括在鳍中的沟道，所述第一晶体管的沟道掺杂有第一极性的第一掺杂物，并且与第一极性相反的具有第二极性的第二掺杂剂相反掺杂，所述第一晶体管的浓度 掺杂剂近似等于第二掺杂剂的浓度，其中第一晶体管和第二晶体管具有相同的导电类型。

公开(公告)号：US09219063B2

公开(公告)日：2015-12-22

申请号：US14153947

申请日：2014-01-13

Applicant: Infineon Technologies AG

Inventor： Juergen Holz ,  Ronald Kakoschke ,  Thomas Nirschl ,  Christian Pacha ,  Klaus Schruefer ,  Thomas Schulz ,  Doris Schmitt-Landsiedel

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/739 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/105 ,  H01L21/336 ,  H01L27/12

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823462 ,  H01L27/1052 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/78 ,  H01L29/785 ,  H01L29/7854 ,  H01L29/7856

Abstract: Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric in comparison with other transistors on the same integrated circuit arrangement. As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions of the tunnel field effect transistor.

Abstract translation: 集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管。 特别地，对于具有较厚的栅极电介质的隧道场效应晶体管与相同的集成电路装置上的其它晶体管相比较的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域之间的界面。

公开(公告)号：US20140124827A1

公开(公告)日：2014-05-08

申请号：US14153947

申请日：2014-01-13

Applicant: Infineon Technologies AG

Inventor： Juergen Holz ,  Ronald Kakoschke ,  Thomas Nirschl ,  Christian Pacha ,  Klaus Schruefer ,  Thomas Schulz ,  Doris Schmitt-Landsiedel

IPC: H01L27/088 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823462 ,  H01L27/1052 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/78 ,  H01L29/785 ,  H01L29/7854 ,  H01L29/7856

Abstract: Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric in comparison with other transistors on the same integrated circuit arrangement. As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions of the tunnel field effect transistor.

Abstract translation: 集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管。 特别地，对于具有较厚的栅极电介质的隧道场效应晶体管与相同的集成电路装置上的其它晶体管相比较的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域之间的界面。

公开(公告)号：US08742505B2

公开(公告)日：2014-06-03

申请号：US13935573

申请日：2013-07-05

Applicant: Infineon Technologies AG

Inventor： Joerg Berthold ,  Christian Pacha ,  Klaus von Arnim

IPC: H01L21/84 ,  H01L21/8238

CPC classification number: G11C11/412 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/04 ,  H01L29/785

Abstract: One or more embodiments relate to an apparatus comprising: a first transistor including a channel in a fin; and a second transistor including a channel in a fin, the channel of the first transistor being doped with a first dopant of a first polarity and counter-doped with a second dopant of a second polarity opposite to the first polarity, a concentration of the first dopant being approximately equal to a concentration of the second dopant, wherein the first transistor and the second transistor are of a same conductivity type.

Abstract translation: 一个或多个实施例涉及一种装置，包括：第一晶体管，其包括翅片中的通道; 以及第二晶体管，其包括在鳍中的沟道，所述第一晶体管的沟道掺杂有第一极性的第一掺杂物，并且与第一极性相反的具有第二极性的第二掺杂剂相反掺杂，所述第一晶体管的浓度 掺杂剂近似等于第二掺杂剂的浓度，其中第一晶体管和第二晶体管具有相同的导电类型。