公开(公告)号：US09219063B2

公开(公告)日：2015-12-22

申请号：US14153947

申请日：2014-01-13

Applicant: Infineon Technologies AG

Inventor： Juergen Holz ,  Ronald Kakoschke ,  Thomas Nirschl ,  Christian Pacha ,  Klaus Schruefer ,  Thomas Schulz ,  Doris Schmitt-Landsiedel

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/739 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/105 ,  H01L21/336 ,  H01L27/12

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823462 ,  H01L27/1052 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/78 ,  H01L29/785 ,  H01L29/7854 ,  H01L29/7856

Abstract: Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric in comparison with other transistors on the same integrated circuit arrangement. As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions of the tunnel field effect transistor.

Abstract translation: 集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管。 特别地，对于具有较厚的栅极电介质的隧道场效应晶体管与相同的集成电路装置上的其它晶体管相比较的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域之间的界面。

公开(公告)号：US20150140770A1

公开(公告)日：2015-05-21

申请号：US14591228

申请日：2015-01-07

Applicant: Infineon Technologies AG

Inventor： Ronald Kakoschke ,  Helmut Horst Tews

IPC: H01L29/66

CPC classification number: H01L21/823418 ,  H01L21/2815 ,  H01L27/088 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66628 ,  H01L29/66659 ,  H01L29/7311 ,  H01L29/78 ,  H01L29/7835

Abstract: A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.

Abstract translation: 公开了一种用于制造隧道场效应晶体管的方法。 通过自对准注入方法产生不同掺杂类型的连接区域。

公开(公告)号：US20140124827A1

公开(公告)日：2014-05-08

申请号：US14153947

申请日：2014-01-13

Applicant: Infineon Technologies AG

Inventor： Juergen Holz ,  Ronald Kakoschke ,  Thomas Nirschl ,  Christian Pacha ,  Klaus Schruefer ,  Thomas Schulz ,  Doris Schmitt-Landsiedel

IPC: H01L27/088 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823462 ,  H01L27/1052 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/78 ,  H01L29/785 ,  H01L29/7854 ,  H01L29/7856

Abstract: Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric in comparison with other transistors on the same integrated circuit arrangement. As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions of the tunnel field effect transistor.

Abstract translation: 集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管。 特别地，对于具有较厚的栅极电介质的隧道场效应晶体管与相同的集成电路装置上的其它晶体管相比较的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域之间的界面。

公开(公告)号：US08946037B2

公开(公告)日：2015-02-03

申请号：US13957277

申请日：2013-08-01

Applicant: Infineon Technologies AG

Inventor： Ronald Kakoschke ,  Helmut Tews

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/73 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L21/823418 ,  H01L21/2815 ,  H01L27/088 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66628 ,  H01L29/66659 ,  H01L29/7311 ,  H01L29/78 ,  H01L29/7835

Abstract: A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.

Abstract translation: 公开了一种用于制造隧道场效应晶体管的方法。 通过自对准注入方法产生不同掺杂类型的连接区域。

公开(公告)号：US09390975B2

公开(公告)日：2016-07-12

申请号：US14591228

申请日：2015-01-07

Applicant: Infineon Technologies AG

Inventor： Ronald Kakoschke ,  Helmut Horst Tews

IPC: H01L21/8234 ,  H01L29/73 ,  H01L21/28 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823418 ,  H01L21/2815 ,  H01L27/088 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66628 ,  H01L29/66659 ,  H01L29/7311 ,  H01L29/78 ,  H01L29/7835

Abstract: A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.

公开(公告)号：US09012995B2

公开(公告)日：2015-04-21

申请号：US14047044

申请日：2013-10-07

Applicant: Infineon Technologies AG

Inventor： Ronald Kakoschke ,  Klaus Schruefer

IPC: H01L29/80 ,  H01L27/105 ,  H01L21/84 ,  H01L27/22 ,  H01L27/24 ,  H01L29/78 ,  H01L45/00 ,  H01L27/115

CPC classification number: H01L27/1052 ,  H01L21/84 ,  H01L27/115 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2463 ,  H01L29/41791 ,  H01L29/785 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141

Abstract: A memory element includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.

Abstract translation: 存储元件包括FinFET选择器件和存储元件。 在一些实施例中，存储器单元具有耦合在鳍片的表面和存储元件之间的接触元件。

公开(公告)号：US20140024193A1

公开(公告)日：2014-01-23

申请号：US13957277

申请日：2013-08-01

Applicant: Infineon Technologies AG

Inventor： Ronald Kakoschke ,  Helmut Tews

IPC: H01L29/66

CPC classification number: H01L21/823418 ,  H01L21/2815 ,  H01L27/088 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66628 ,  H01L29/66659 ,  H01L29/7311 ,  H01L29/78 ,  H01L29/7835

Abstract: A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.

Abstract translation: 公开了一种用于制造隧道场效应晶体管的方法。 通过自对准注入方法产生不同掺杂类型的连接区域。