公开(公告)号：US20250006814A1

公开(公告)日：2025-01-02

申请号：US18756389

申请日：2024-06-27

Applicant: Infineon Technologies AG

Inventor： Wolfgang LEHNERT ,  Fabian RASINGER ,  Thomas AICHINGER ,  Gerald RESCHER ,  Francisco Javier SANTOS RODRIGUEZ ,  Carsten SCHAEFFER ,  Armin TILKE

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/16 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78

Abstract: A method for forming an interface layer on a silicon carbide body comprises removing an oxide layer from a surface of a silicon carbide body to obtain a silicon carbide surface. The silicon carbide body comprises a source region of a first conductivity type and a body region of a second conductivity type. The method further comprises after removing the oxide layer, depositing an interface layer directly on the silicon carbide surface. The interface layer has a thickness of less or equal to 15 nm. The method further comprises forming an electrical insulator over the interface layer, and forming a gate electrode over the electrical insulator.