公开(公告)号：US20170140938A1

公开(公告)日：2017-05-18

申请号：US15348245

申请日：2016-11-10

Applicant: Infineon Technologies AG

Inventor： Franz-Josef NIEDERNOSTHEIDE ,  Johannes Georg LAVEN ,  Hans-Joachim SCHULZE

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/324

CPC classification number: H01L21/2652 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324

Abstract: A method of forming a semiconductor device includes irradiating a semiconductor body with particles. Dopant ions are implanted into the semiconductor body such that the dopant ions are configured to be activated as donors or acceptors. Thereafter, the semiconductor body is processed thermally.

公开(公告)号：US20180269872A1

公开(公告)日：2018-09-20

申请号：US15921893

申请日：2018-03-15

Applicant: Infineon Technologies AG

Inventor： Thomas BASLER ,  Roman BABURSKE ,  Johannes Georg LAVEN ,  Franz-Josef NIEDERNOSTHEIDE ,  Hans-Joachim SCHULZE

IPC: H03K17/567 ,  H03K17/687 ,  H01L27/06 ,  H01L27/088 ,  H01L29/78 ,  H01L29/739 ,  H01L29/778 ,  H01L29/165 ,  H01L29/16 ,  H01L29/808

CPC classification number: H03K17/567 ,  H01L27/0635 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/7393 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/808 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091 ,  H03K17/12 ,  H03K17/687 ,  H03K2217/0036

Abstract: Transistor devices are described that include a first transistor and a second transistor coupled in parallel between a first terminal and a second terminal. The second transistor is based on a wide bandgap semiconductor material. The second transistor has a breakthrough voltage lower than a breakthrough voltage of the first transistor over a predetermined operating range. The predetermined operating range comprises at least an operating range for which the transistor device is specified.