公开(公告)号：US20230275576A1

公开(公告)日：2023-08-31

申请号：US18115080

申请日：2023-02-28

Applicant: Infineon Technologies AG

Inventor： Roman BABURSKE ,  Frank Pfirsch ,  Jana HÃNSEL ,  Katja Waschneck

IPC: H03K17/0812 ,  H01L29/16 ,  H01L29/739 ,  H01L29/06

CPC classification number: H03K17/08128 ,  H01L29/1608 ,  H01L29/7397 ,  H01L29/0696

Abstract: A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.

公开(公告)号：US20180269872A1

公开(公告)日：2018-09-20

申请号：US15921893

申请日：2018-03-15

Applicant: Infineon Technologies AG

Inventor： Thomas BASLER ,  Roman BABURSKE ,  Johannes Georg LAVEN ,  Franz-Josef NIEDERNOSTHEIDE ,  Hans-Joachim SCHULZE

IPC: H03K17/567 ,  H03K17/687 ,  H01L27/06 ,  H01L27/088 ,  H01L29/78 ,  H01L29/739 ,  H01L29/778 ,  H01L29/165 ,  H01L29/16 ,  H01L29/808

CPC classification number: H03K17/567 ,  H01L27/0635 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/7393 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/808 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091 ,  H03K17/12 ,  H03K17/687 ,  H03K2217/0036

Abstract: Transistor devices are described that include a first transistor and a second transistor coupled in parallel between a first terminal and a second terminal. The second transistor is based on a wide bandgap semiconductor material. The second transistor has a breakthrough voltage lower than a breakthrough voltage of the first transistor over a predetermined operating range. The predetermined operating range comprises at least an operating range for which the transistor device is specified.