公开(公告)号：US20170059997A1

公开(公告)日：2017-03-02

申请号：US15249758

申请日：2016-08-29

Applicant: Infineon Technologies AG

Inventor： Roland RUPP ,  Rudolf ELPELT ,  Romain ESTEVE

IPC: G03F7/20 ,  H01L21/027 ,  H01L29/06 ,  H01L23/544 ,  H01L29/16 ,  H01L29/36

CPC classification number: G03F7/70008 ,  G03F7/70775 ,  H01J37/3171 ,  H01L21/0273 ,  H01L21/0465 ,  H01L23/544 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8611 ,  H01L2223/54426 ,  H01L2223/5446

Abstract: A beam modifier device is provided that includes scattering portions in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction. A total permeability for the particles changes along a lateral direction parallel to the exposure surface.

Abstract translation: 提供了一种光束调节装置，其包括散射部分，其中垂直撞击在光束修改装置的曝光表面上的颗粒从垂直方向偏转。 颗粒的总磁导率沿平行于曝光表面的横向变化。

公开(公告)号：US20200219972A1

公开(公告)日：2020-07-09

申请号：US16733329

申请日：2020-01-03

Applicant: Infineon Technologies AG

Inventor： Caspar LEENDERTZ ,  Rudolf ELPELT ,  Romain ESTEVE ,  Thomas GANNER ,  Jens Peter KONRATH ,  Larissa WEHRHAHN-KILIAN

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

公开(公告)号：US20190049850A1

公开(公告)日：2019-02-14

申请号：US16153186

申请日：2018-10-05

Applicant: Infineon Technologies AG

Inventor： Roland RUPP ,  Rudolf ELPELT ,  Romain ESTEVE

IPC: G03F7/20 ,  H01L29/36 ,  H01L29/66 ,  H01L23/544 ,  H01L29/16 ,  H01L21/027 ,  H01L21/04 ,  H01L29/06

Abstract: A semiconductor device is provided that includes a silicon carbide substrate including a main surface at which a plurality of doped zones are formed in a junction termination extension zone of the silicon carbide substrate, the plurality of doped zones are arranged such that a lateral dopant concentration gradient is formed that decreases from a central region of the silicon carbide substrate to an outer edge region of the silicon carbide substrate.