公开(公告)号：US20150325535A1

公开(公告)日：2015-11-12

申请号：US14272535

申请日：2014-05-08

Applicant: Infineon Technologies AG

Inventor： Stephan HENNECK ,  Evelyn NAPETSCHNIG ,  Daniel PEDONE ,  Bernhard WEIDGANS ,  Simon FAISS ,  Ivan NIKITIN

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/03472 ,  H01L2224/03614 ,  H01L2224/05007 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05558 ,  H01L2224/05583 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01023

Abstract: A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization layer over a semiconductor workpiece; patterning the first metallization layer; and depositing a second metallization layer over the patterned first metallization layer, wherein depositing the second metallization layer includes an electroless deposition process including immersing the patterned first metallization layer in a metal electrolyte.

Abstract translation: 根据各种实施例的用于处理半导体器件的方法可以包括：在半导体工件上沉积第一金属化层; 图案化第一金属化层; 以及在图案化的第一金属化层上沉积第二金属化层，其中沉积第二金属化层包括无电沉积工艺，包括将图案化的第一金属化层浸入金属电解质中。