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1.发明申请SEMICONDUCTOR DEVICES, A FLUID SENSOR AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE 有权半导体器件，流体传感器和形成半导体器件的方法公开(公告)号：US20160351739A1
公开(公告)日：2016-12-01
申请号：US15167292
申请日：2016-05-27
发明人： Stefan CLARA , Thomas Grille , Ursula Hedenig , Peter Irsigler , Bernhard Jakoby , Ventsislav M. Lavchiev , Thomas Ostermann , Thomas Popp
IPC分类号： H01L31/0352 , H01L31/18 , H01L33/06
CPC分类号： H01L31/035254 , H01L31/035209 , H01L31/035218 , H01L31/173 , H01L31/1812 , H01L31/1864 , H01L33/06 , H01L2933/0033
摘要： A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
摘要翻译： 半导体器件包括主要包含锗的多个量子结构。 多个量子结构形成在第一半导体层结构上。 多个量子结构的量子结构具有小于15nm的横向尺寸和每平方厘米至少8×1011个量子结构的面积密度。 多个量子结构被配置为发射波长在2μm和10μm之间的发光最大值的光，或者吸收波长在2μm和10μm之间的最大光吸收的光。
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公开(公告)号：US20180212085A1
公开(公告)日：2018-07-26
申请号：US15925904
申请日：2018-03-20
发明人： Stefan CLARA , Thomas Grille , Ursula Hedenig , Peter Irsigler , Bernhard Jakoby , Ventsislav M. Lavchiev , Thomas Ostermann , Thomas Popp
IPC分类号： H01L31/0352 , H01L31/18 , H01L33/06
CPC分类号： H01L31/035254 , H01L31/035209 , H01L31/035218 , H01L31/173 , H01L31/1812 , H01L31/1864 , H01L33/06 , H01L2933/0033
摘要： A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
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