公开(公告)号：US11094779B2

公开(公告)日：2021-08-17

申请号：US15496223

申请日：2017-04-25

Applicant: Infineon Technologies AG

Inventor： Philip Christoph Brandt ,  Andre Rainer Stegner ,  Francisco Javier Santos Rodriguez ,  Frank Dieter Pfirsch ,  Hans-Joachim Schulze ,  Manfred Pfaffenlehner ,  Thomas Auer

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/861 ,  H01L21/225 ,  H01L21/266 ,  H01L21/324 ,  H01L21/761 ,  H01L29/739 ,  H01L29/74 ,  H01L21/265

Abstract: An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.

公开(公告)号：USD853342S1

公开(公告)日：2019-07-09

申请号：US29615042

申请日：2017-08-25

Applicant: Infineon Technologies AG

Designer： Thomas Auer ,  Andras Bertalan ,  Jens Krugmann ,  Christoph Messelke

公开(公告)号：US20170317165A1

公开(公告)日：2017-11-02

申请号：US15496223

申请日：2017-04-25

Applicant: Infineon Technologies AG

Inventor： Philip Christoph Brandt ,  Andre Rainer Stegner ,  Francisco Javier Santos Rodriguez ,  Frank Dieter Pfirsch ,  Hans-Joachim Schulze ,  Manfred Pfaffenlehner ,  Thomas Auer

IPC: H01L29/06 ,  H01L29/74 ,  H01L29/739 ,  H01L21/761 ,  H01L21/324 ,  H01L21/266 ,  H01L21/265 ,  H01L29/78 ,  H01L21/225

CPC classification number: H01L29/0623 ,  H01L21/2253 ,  H01L21/2255 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/761 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/66128 ,  H01L29/7395 ,  H01L29/7424 ,  H01L29/7811 ,  H01L29/8611

Abstract: An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.

公开(公告)号：USD853978S1

公开(公告)日：2019-07-16

申请号：US29615038

申请日：2017-08-25

Applicant: Infineon Technologies AG

Designer： Thomas Auer ,  Andras Bertalan ,  Jens Krugmann ,  Christoph Messelke