公开(公告)号：US10896893B2

公开(公告)日：2021-01-19

申请号：US16820069

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20190035764A1

公开(公告)日：2019-01-31

申请号：US16036252

申请日：2018-07-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200219841A1

公开(公告)日：2020-07-09

申请号：US16820069

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200243480A1

公开(公告)日：2020-07-30

申请号：US16820057

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K35/26 ,  B23K1/00 ,  B23K35/28 ,  B23K1/20 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200185293A1

公开(公告)日：2020-06-11

申请号：US16213593

申请日：2018-12-07

Applicant: Infineon Technologies AG

Inventor： Stefan Schmalzl ,  Chau Fatt Chiang ,  Werner Reiss

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/485 ,  H01L23/36 ,  H01L21/56 ,  H01L21/48

Abstract: Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

公开(公告)号：US10892247B2

公开(公告)日：2021-01-12

申请号：US16820057

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20190181120A1

公开(公告)日：2019-06-13

申请号：US16213478

申请日：2018-12-07

Applicant: Infineon Technologies AG

Inventor： Chau Fatt Chiang ,  April Coleen Tuazon Bernardez ,  Junny Abdul Wahid ,  Roslie Saini bin Bakar ,  Kon Hoe Chin ,  Hock Heng Chong ,  Kok Yau Chua ,  Hsieh Ting Kuek ,  Chee Hong Lee ,  Soon Lee Liew ,  Nurfarena Othman ,  Pei Luan Pok ,  Werner Reiss ,  Stefan Schmalzl

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/498 ,  H01L23/10

Abstract: Embodiments of chip-package and corresponding methods of manufacture are provided. In an embodiment of a chip-package, the chip-package includes: a carrier having a first side and a second side opposing the first side; a first chip coupled to the first side of the carrier; a second chip coupled to the second side of the carrier; an encapsulation with a first portion, which at least partially encloses the first chip on the first side of the carrier, and a second portion, which at least partially encloses the second chip on the second side of the carrier; a via extending through the first portion of the encapsulation, the carrier and the second portion of the encapsulation; and an electrically conductive material at least partly covering a sidewall of the via in the first portion or the second portion of the encapsulation, to electrically contact the carrier at either side.

公开(公告)号：US11450642B2

公开(公告)日：2022-09-20

申请号：US17132585

申请日：2020-12-23

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20210118843A1

公开(公告)日：2021-04-22

申请号：US17132585

申请日：2020-12-23

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US10777536B2

公开(公告)日：2020-09-15

申请号：US16213478

申请日：2018-12-07

Applicant: Infineon Technologies AG

Inventor： Chau Fatt Chiang ,  April Coleen Tuazon Bernardez ,  Junny Abdul Wahid ,  Roslie Saini bin Bakar ,  Kon Hoe Chin ,  Hock Heng Chong ,  Kok Yau Chua ,  Hsieh Ting Kuek ,  Chee Hong Lee ,  Soon Lee Liew ,  Nurfarena Othman ,  Pei Luan Pok ,  Werner Reiss ,  Stefan Schmalzl

IPC: H01L25/075 ,  H01L25/065 ,  H01L23/498 ,  B81B7/00 ,  H01L23/31 ,  B81C1/00 ,  H01L23/10

Abstract: Embodiments of chip-package and corresponding methods of manufacture are provided. In an embodiment of a chip-package, the chip-package includes: a carrier having a first side and a second side opposing the first side; a first chip coupled to the first side of the carrier; a second chip coupled to the second side of the carrier; an encapsulation with a first portion, which at least partially encloses the first chip on the first side of the carrier, and a second portion, which at least partially encloses the second chip on the second side of the carrier; a via extending through the first portion of the encapsulation, the carrier and the second portion of the encapsulation; and an electrically conductive material at least partly covering a sidewall of the via in the first portion or the second portion of the encapsulation, to electrically contact the carrier at either side.