公开(公告)号：US12288727B2

公开(公告)日：2025-04-29

申请号：US18130662

申请日：2023-04-04

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Steffen Jordan ,  Stefan Miethaner ,  Stefan Schwab

IPC: H01L23/29 ,  H01L21/56

Abstract: A method of manufacturing a package includes forming an adhesion promoter on at least part of an electronic component. The adhesion promoter is a morphological adhesion promoter including a morphological structure having a plurality of openings. The method further includes at least partially encapsulating the electronic component with an inorganic encapsulant with the adhesion promoter in between. The adhesion promoter enhances adhesion between at least part of the electronic component and the encapsulant.

公开(公告)号：US20240413033A1

公开(公告)日：2024-12-12

申请号：US18810035

申请日：2024-08-20

Applicant: Infineon Technologies AG

Inventor： Stefan Schwab ,  Edmund Riedl

IPC: H01L23/31 ,  H01L21/54 ,  H01L21/56 ,  H01L23/42 ,  H01L23/495

Abstract: A method includes coupling a first sub-structure with a second sub-structure; configuring the second sub-structure as a composite comprising filler particles in a matrix; configuring a surface of the first sub-structure with a surface profile having first elevations and first recesses; at least partially inserting at least part of the filler particles in the first recesses to form an interlayer comprising the first elevations of the first sub-structure and filler particles in the matrix of the second sub-structure; and forming second elevations and second recesses on the first elevations and the first recesses, wherein the second elevations and the second recesses have smaller dimensions than the first elevations and the first recesses, wherein the second recesses are dimensioned to enable at least part of the matrix to at least partially enter the second recesses and are dimensioned to disable the filler particles to enter the second recesses.

公开(公告)号：US12136578B2

公开(公告)日：2024-11-05

申请号：US17238372

申请日：2021-04-23

Applicant: Infineon Technologies AG

Inventor： Stefan Schwab ,  Edmund Riedl

IPC: H01L23/31 ,  H01L21/54 ,  H01L21/56 ,  H01L23/42 ,  H01L23/495

Abstract: A structure includes a first sub-structure and a second sub-structure coupled with the first sub-structure and being a composite including filler particles in a matrix. A surface of the first sub-structure has a surface profile with first elevations and first recesses configured to enable at least part of the filler particles to at least partially enter the first recesses to thereby form an interlayer including the first elevations of the first sub-structure and filler particles in the matrix of the second sub-structure.

公开(公告)号：US11450642B2

公开(公告)日：2022-09-20

申请号：US17132585

申请日：2020-12-23

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20210118843A1

公开(公告)日：2021-04-22

申请号：US17132585

申请日：2020-12-23

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200381314A1

公开(公告)日：2020-12-03

申请号：US16884756

申请日：2020-05-27

Applicant: Infineon Technologies AG

Inventor： Wu Hu Li ,  Stefan Schwab ,  Verena Muhr ,  Edmund Riedl ,  Alexander Roth ,  Harry Sax

IPC: H01L21/66 ,  H01L21/48 ,  B05D1/02 ,  C25D3/22 ,  C25D5/18 ,  C25D7/12

Abstract: A method for providing coated leadframes in a process line includes: feeding a plurality of leadframes successively into a process line; depositing a layer onto a main face of the leadframes; measuring physical properties of the layer by one of ellipsometry or reflectometry; assigning measured physical data to any one of a plurality of categories; and depending on a resulting category of the measured physical data, altering process parameters of the depositing, not altering the process parameters of the depositing, or shutting down the process line.

公开(公告)号：US10734352B2

公开(公告)日：2020-08-04

申请号：US16148316

申请日：2018-10-01

Applicant: Infineon Technologies AG

Inventor： Irmgard Escher-Poeppel ,  Khalil Hosseini ,  Johannes Lodermeyer ,  Joachim Mahler ,  Thorsten Meyer ,  Georg Meyer-Berg ,  Ivan Nikitin ,  Reinhard Pufall ,  Edmund Riedl ,  Klaus Schmidt ,  Manfred Schneegans ,  Patrick Schwarz

IPC: H01L23/00

Abstract: A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.

公开(公告)号：US20200243480A1

公开(公告)日：2020-07-30

申请号：US16820057

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K35/26 ,  B23K1/00 ,  B23K35/28 ,  B23K1/20 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200231800A1

公开(公告)日：2020-07-23

申请号：US16749425

申请日：2020-01-22

Applicant: Infineon Technologies AG

Inventor： Alexander Roth ,  Edmund Riedl ,  Stefan Schwab

IPC: C08L63/00 ,  H01L23/29 ,  C08G59/68

Abstract: A mold compound includes the following constituents: a matrix composed of a polymer resin, less than 0.1 weight percent of a free adhesion promoter, based on the total weight of the mold compound, for promoting adhesion of the mold compound, a curing agent for curing the polymer resin, and a catalyst for catalysing formation of the mold compound; and a filler.

公开(公告)号：US11328935B2

公开(公告)日：2022-05-10

申请号：US16743571

申请日：2020-01-15

Applicant: Infineon Technologies AG

Inventor： Johann Gatterbauer ,  Wolfgang Lehnert ,  Norbert Mais ,  Verena Muhr ,  Edmund Riedl ,  Harry Sax

IPC: H01L21/48 ,  H01L21/02 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  C23C14/12

Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.