公开(公告)号：US11450642B2

公开(公告)日：2022-09-20

申请号：US17132585

申请日：2020-12-23

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20210118843A1

公开(公告)日：2021-04-22

申请号：US17132585

申请日：2020-12-23

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200219841A1

公开(公告)日：2020-07-09

申请号：US16820069

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20200381314A1

公开(公告)日：2020-12-03

申请号：US16884756

申请日：2020-05-27

Applicant: Infineon Technologies AG

Inventor： Wu Hu Li ,  Stefan Schwab ,  Verena Muhr ,  Edmund Riedl ,  Alexander Roth ,  Harry Sax

IPC: H01L21/66 ,  H01L21/48 ,  B05D1/02 ,  C25D3/22 ,  C25D5/18 ,  C25D7/12

Abstract: A method for providing coated leadframes in a process line includes: feeding a plurality of leadframes successively into a process line; depositing a layer onto a main face of the leadframes; measuring physical properties of the layer by one of ellipsometry or reflectometry; assigning measured physical data to any one of a plurality of categories; and depending on a resulting category of the measured physical data, altering process parameters of the depositing, not altering the process parameters of the depositing, or shutting down the process line.

公开(公告)号：US20200243480A1

公开(公告)日：2020-07-30

申请号：US16820057

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K35/26 ,  B23K1/00 ,  B23K35/28 ,  B23K1/20 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US10896893B2

公开(公告)日：2021-01-19

申请号：US16820069

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US20190035764A1

公开(公告)日：2019-01-31

申请号：US16036252

申请日：2018-07-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US10892247B2

公开(公告)日：2021-01-12

申请号：US16820057

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl ,  Wu Hu Li ,  Alexander Heinrich ,  Ralf Otremba ,  Werner Reiss

IPC: H01L23/00 ,  H01L23/498 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  B23K35/28 ,  B23K101/38

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

公开(公告)号：US10366946B2

公开(公告)日：2019-07-30

申请号：US15797297

申请日：2017-10-30

Applicant: Infineon Technologies AG

Inventor： Wu Hu Li ,  Edmund Riedl ,  Thomas Horedt ,  Ali Mazloum-Nejadari

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/14 ,  H01L23/31 ,  H01L23/00 ,  H01L23/367

Abstract: A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.