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公开(公告)号：US20170197865A1
公开(公告)日：2017-07-13
申请号：US15469640
申请日：2017-03-27
CPC分类号： C03B19/02 , B29C33/56 , B29C33/60 , B29K2907/04 , C03B11/06 , C03B40/00 , C03B2215/24 , C03B2215/41 , C03B2215/50 , C23C16/045 , C23C16/26
摘要： Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (LPCVD) or using a physical vapor deposition (PVD) process in order to form a pyrolytic carbon film at a surface of a mold.
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2.发明申请公开(公告)号：US20170011927A1
公开(公告)日：2017-01-12
申请号：US15273589
申请日：2016-09-22
发明人： Juergen Steinbrenner , Markus Kahn , Helmut Schoenherr , Ravi Joshi , Heimo Hofer , Martin Poelzl , Harald Huetter
CPC分类号： H01L21/28185 , H01L21/02129 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/02362 , H01L21/76801 , H01L21/76828 , H01L23/5329 , H01L29/0649 , H01L29/0696 , H01L29/4236 , H01L29/42364 , H01L29/51 , H01L29/66734 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
摘要翻译： 沉积绝缘层的方法包括通过以第一流速使用硅源和以第二流量的掺杂剂源沉积硅酸盐玻璃层来在特征的侧壁上进行初次沉积。 掺杂剂源的流量与硅源的流量的比率是第一比率。 该方法还包括通过增加硅源相对于掺杂源的流动的流动来在特征的侧壁上进行二次沉积。 掺杂剂源的流量与硅源的流量的比率是低于第一比率的第二比例，并且在执行二次沉积之后停止硅源的流动。 停止流动后进行回流处理。 在回流处理之后，特征的侧壁上的硅酸盐玻璃层的厚度变化在1％至20％之间。
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3.发明授权公开(公告)号：US09455136B2
公开(公告)日：2016-09-27
申请号：US14603943
申请日：2015-01-23
发明人： Juergen Steinbrenner , Markus Kahn , Helmut Schoenherr , Ravi Joshi , Heimo Hofer , Martin Poelzl , Harald Huetter
IPC分类号： H01L21/336 , H01L21/02 , H01L21/768 , H01L23/528 , H01L23/532 , H01L29/06
CPC分类号： H01L21/28185 , H01L21/02129 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/02362 , H01L21/76801 , H01L21/76828 , H01L23/5329 , H01L29/0649 , H01L29/0696 , H01L29/4236 , H01L29/42364 , H01L29/51 , H01L29/66734 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
摘要翻译： 沉积绝缘层的方法包括通过以第一流速使用硅源和以第二流量的掺杂剂源沉积硅酸盐玻璃层来在特征的侧壁上进行初次沉积。 掺杂剂源的流量与硅源的流量的比率是第一比率。 该方法还包括通过增加硅源相对于掺杂源的流动的流动来在特征的侧壁上进行二次沉积。 掺杂剂源的流量与硅源的流量的比率是低于第一比率的第二比例，并且在执行二次沉积之后停止硅源的流动。 停止流动后进行回流处理。 在回流处理之后，特征的侧壁上的硅酸盐玻璃层的厚度变化在1％至20％之间。
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4.发明申请MOLD, METHOD FOR PRODUCING A MOLD, AND METHOD FOR FORMING A MOLD ARTICLE 审中-公开模具，用于生产模具的方法，以及形成模型的方法公开(公告)号：US20150175467A1
公开(公告)日：2015-06-25
申请号：US14138159
申请日：2013-12-23
CPC分类号： C03B19/02 , B29C33/56 , B29C33/60 , B29K2907/04 , C03B11/06 , C03B40/00 , C03B2215/24 , C03B2215/41 , C03B2215/50 , C23C16/045 , C23C16/26
摘要： Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (LPCVD) or using a physical vapor deposition (PVD) process in order to form a pyrolytic carbon film at a surface of a mold.
摘要翻译： 各种实施方案提供了一种模具，其包括设置在模具表面处的热解碳膜。 各种实施方案涉及使用低压化学气相沉积工艺（LPCVD）或使用物理气相沉积（PVD）工艺，以便在模具的表面形成热解碳膜。
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公开(公告)号：US20240194779A1
公开(公告)日：2024-06-13
申请号：US18522816
申请日：2023-11-29
发明人： Christian Zmölnig , Markus Kahn , Juergen Steinbrenner , Oliver Humbel , Angelika Koprowski , Thomas Kurzmann
CPC分类号： H01L29/7811 , H01L29/0611 , H01L29/7395
摘要： The application refers to a semiconductor device including: a semiconductor body having a first surface and a second surface; an active region having at least one semiconductor cell configured to conduct a load current between the first surface and the second surface; an edge termination region separating the active region from a chip edge; and a first layer within at least a part of the edge termination region. The first layer includes silicon, nitrogen and hydrogen. In atomic numbers, a ratio of the silicon to the nitrogen is at least 3.3 to 4 in at least a portion of the first layer. At least the portion of the first layer includes at most 16 percent hydrogen in atomic numbers.
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公开(公告)号：US20180247820A1
公开(公告)日：2018-08-30
申请号：US15964408
申请日：2018-04-27
发明人： Juergen Steinbrenner , Markus Kahn , Helmut Schoenherr , Ravi Keshav Joshi , Heimo Hofer , Martin Poelzl , Harald Huetter
CPC分类号： H01L21/28185 , H01L21/02129 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/02362 , H01L21/76801 , H01L21/76828 , H01L23/5329 , H01L29/0649 , H01L29/0696 , H01L29/4236 , H01L29/42364 , H01L29/51 , H01L29/66734 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
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公开(公告)号：US20160218002A1
公开(公告)日：2016-07-28
申请号：US14603943
申请日：2015-01-23
发明人： Juergen Steinbrenner , Markus Kahn , Helmut Schoenherr , Ravi Joshi , Heimo Hofer , Martin Poelzl , Harald Huetter
IPC分类号： H01L21/02 , H01L29/06 , H01L23/532 , H01L21/768 , H01L23/528
CPC分类号： H01L21/28185 , H01L21/02129 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/02362 , H01L21/76801 , H01L21/76828 , H01L23/5329 , H01L29/0649 , H01L29/0696 , H01L29/4236 , H01L29/42364 , H01L29/51 , H01L29/66734 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
摘要翻译： 沉积绝缘层的方法包括通过以第一流速使用硅源和以第二流量的掺杂剂源沉积硅酸盐玻璃层来在特征的侧壁上进行初次沉积。 掺杂剂源的流量与硅源的流量的比率是第一比率。 该方法还包括通过增加硅源相对于掺杂源的流动的流动来在特征的侧壁上进行二次沉积。 掺杂剂源的流量与硅源的流量的比率是低于第一比率的第二比例，并且在执行二次沉积之后停止硅源的流动。 停止流动后进行回流处理。 在回流处理之后，特征的侧壁上的硅酸盐玻璃层的厚度变化在1％至20％之间。
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