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    Semiconductor wafer plating cell assembly
    2.
    发明申请
    Semiconductor wafer plating cell assembly 失效
    半导体晶圆电镀电池组件

    公开(公告)号：US20030085118A1

    公开(公告)日：2003-05-08

    申请号：US10012079

    申请日：2001-11-02

    申请人： Innovative Technology Licensing, LLC

    发明人： D. Morgan Tench ,  John T. White

    IPC分类号： C25C007/00 ,  C25D017/00 ,  C25B009/00

    CPC分类号： H01L21/2885 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A new cell assembly for semiconductor wafer electroplating in the plated-side-up configuration utilizes a narrow passageway around the perimeter of the wafer through which solution is forced so as to provide the laminar flow needed for effective Damascene copper plating. In addition, use of a cylindrical insulating cell wall whose inside diameter matches that of the wafer area being plated avoids overplating of the wafer periphery. Anode isolation in a compartment separated via a solution transport barrier prevents introduction of particulates and holds anolyte in place during wafer changes. This cell assembly is readily amendable to automated wafer plating.

    摘要翻译： 用于电镀侧向配置中的半导体晶片电镀的新电池组件利用围绕晶片周边的窄通道，通过该细胞强制溶液以提供有效的大马士革铜电镀所需的层流。 此外，使用其内径与正在镀覆的晶片区域的直径匹配的圆柱形绝缘电池壁避免了晶片周边的过度镀覆。 通过溶液输送屏障隔开的隔室中的阳极隔离防止颗粒物引入，并且在晶片更换期间将阳极电解液放置在适当位置。 该电池组件易于修改为自动晶片电镀。

    Locally-distributed electrode and method of fabrication
    3.
    发明申请
    Locally-distributed electrode and method of fabrication 失效
    局部分布电极及其制造方法

    公开(公告)号：US20040020767A1

    公开(公告)日：2004-02-05

    申请号：US10211494

    申请日：2002-08-01

    申请人： Innovative Technology Licensing, LLC

    发明人： D. Morgan Tench

    IPC分类号： G02F001/153 ,  B23H003/04 ,  B23H005/10 ,  C25F007/00 ,  C25C007/02 ,  B23H007/22 ,  C25B011/00 ,  C25D017/10

    CPC分类号： C25D5/02 ,  G02F1/1506 ,  G02F1/155

    摘要： A locally distributed electrode is made by placing a conducting metallic oxide layer and a counter electrode in contact with a noble metal electroplating solution and applying a negative potential to the metallic oxide layer relative to the counter electrode, such that the noble metal is electrodeposited from the solution preferentially at defect sites on a surface of the metallic oxide layer. The noble metal nuclei are selectively electrodeposited at the defect sites to form a locally distributed electrode made up of a dot matrix of metallic islands. For reversible electrochemical mirror (REM) devices, the presence of the noble metal renders mirror metal electrodeposition at the defect sites reversible so that the defects become part of the dot matrix electrode and extraneous deposition of the mirror metal on the conducting metallic oxide is avoided. This method avoids the use of expensive photolithography, is readily scalable to large areas, and produces electrodes that offer the optimum compromise between high current carrying capability and high light transmission.

    摘要翻译： 通过将导电金属氧化物层和对电极与贵金属电镀溶液接触并相对于相对电极向金属氧化物层施加负电位，从而使贵金属从 溶液优选在金属氧化物层的表面上的缺陷位置。 贵金属核被选择性地电沉积在缺陷部位以形成由金属岛的点阵组成的局部分布电极。 对于可逆电化学镜（REM）器件，贵金属的存在使得在缺陷部位的镜面金属电沉积可逆，使得缺陷成为点阵电极的一部分，并且避免了镜面金属在导电金属氧化物上的外来沉积。 该方法避免使用昂贵的光刻，易于扩展到大面积，并产生提供高载流能力和高光透射之间最佳折中的电极。