公开(公告)号：US20240222441A1

公开(公告)日：2024-07-04

申请号：US18091197

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Mahmut Sami Kavrik ,  Carl Naylor ,  Chelsey Dorow ,  Chia-Ching Lin ,  Dominique Adams ,  Kevin O'Brien ,  Matthew Metz ,  Scott Clendenning ,  Sudarat Lee ,  Tristan Tronic ,  Uygar Avci

IPC: H01L29/40 ,  H01L21/04 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/44 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/401 ,  H01L21/043 ,  H01L21/044 ,  H01L21/28264 ,  H01L21/32136 ,  H01L21/44 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/454 ,  H01L29/78648 ,  H01L29/4908

Abstract: Devices, transistor structures, systems, and techniques, are described herein related to selective gate oxide formation on 2D materials for transistor devices. A transistor structure includes a gate dielectric structure on a 2D semiconductor material layer, and source and drain structures in contact with the gate dielectric structure and on the 2D semiconductor material layer. The source and drain structures include a metal material or metal nitride material and the gate dielectric structure includes an oxide of the metal material or metal nitride material.

公开(公告)号：US20240222485A1

公开(公告)日：2024-07-04

申请号：US18091209

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Mahmut Sami Kavrik ,  Tristan Tronic ,  Chelsey Dorow ,  Kevin O?Brien ,  Uygar Avci ,  Carl H. Naylor ,  Chia-Ching Lin ,  Dominique Adams ,  Matthew Metz ,  Ande Kitamura ,  Scott B. Clendenning

IPC: H01L29/775 ,  H01L27/088 ,  H01L29/06 ,  H01L29/26 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/26 ,  H01L29/42392 ,  H01L29/66969

Abstract: A transistor structure includes a stack of nanoribbons coupling source and drain terminals. The nanoribbons may each include a pair of crystalline interface layers and a channel layer between the interface layers. The channel layers may be a molecular monolayer, including a metal and a chalcogen, with a thickness of less than 1 nm. The channel layers may be substantially monocrystalline, and the interface layers may be lattice matched to the channel layers. The channel layers may be epitaxially grown over the lattice-matched interface layers. The crystalline interface layers may be grown over sacrificial layers when forming the stack of nanoribbons.