SEAM-FREE SILICON NITRIDE GAP-FILL TECHNIQUES FOR HIGH ASPECT RATIO TRENCHES

    公开(公告)号:US20200211833A1

    公开(公告)日:2020-07-02

    申请号:US16632449

    申请日:2017-08-22

    Abstract: An integrated circuit device includes: a semiconductor structure having a high aspect ratio (HAR) feature, the HAR feature having a depth of between 25 nanometers (nm) and 250 nm, a width of between 5 nm and 50 nm, and a depth-to-width aspect ratio of 5:1 or more; and a gap-fill material at least partially filling the HAR feature, the gap-fill material including silicon and nitrogen and being substantially free of a seam located between opposing sides of the HAR feature. A semiconductor process platform includes a nitrogen radical generator to generate nitrogen radicals for delivery to one of the zones, each zone being configured to deliver a separate precursor of a deposition cycle. A method of semiconductor device fabrication includes reacting surfaces of the HAR feature with a silicon precursor, and reacting the silicon-precursed surfaces with nitrogen plasma to form a monolayer of silicon nitride.

    METHODS & APPARATUS FOR ELECTROLESS PLATING DISPENSE

    公开(公告)号:US20210375662A1

    公开(公告)日:2021-12-02

    申请号:US16330365

    申请日:2016-09-29

    Abstract: A single-substrate electroless (EL) plating apparatus including a workpiece chuck that is rotatable about rotation axis and inclinable about an axis of inclination. The chuck inclination may be controlled to a non-zero inclination angle during a dispense of plating solution to improve uniformity in the surface wetting and/or plating solution residence time across the a surface of a workpiece supported by the chuck. The angle of inclination may be only a few degrees off-level with the plating solution dispensed from a nozzle that scans over a high-side of the chuck along a radius of the workpiece while the chuck rotates. The angle of inclination may be actively controlled during dispense of the plating solution. The inclination angle may be larger at commencement of the plating solution dispense than at cessation of the dispense.

Patent Agency Ranking