公开(公告)号：US20210167019A1

公开(公告)日：2021-06-03

申请号：US16636315

申请日：2017-09-01

Applicant: Intel Corporation

Inventor： Daniel Zierath ,  Srijit Mukherjee ,  Jason Farmer ,  Chandan Ganpule ,  Julia Lin

IPC: H01L23/532 ,  H01L21/768

Abstract: Provided herein are metal interconnects that may include a cobalt alloy, a nickel alloy, or nickel. Also provided herein are methods of making metal interconnects. The metal interconnects may include a barrier and/or adhesion layer, a seed layer, a fill material, a cap, or a combination thereof, and at least one of the barrier and/or adhesion layer, the seed layer, the fill material, or the cap may include a cobalt alloy, a nickel alloy, nickel, or a combination thereof.

公开(公告)号：US11769729B2

公开(公告)日：2023-09-26

申请号：US16015045

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Daniel J. Zierath ,  Michael McSwiney ,  Jason Farmer ,  Akm Shaestagir Chowdhury

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L25/065 ,  C22C19/07 ,  C23C16/02 ,  C22C30/00 ,  C23C16/06 ,  C22C19/03 ,  C23C16/04 ,  C22C19/00

CPC classification number: H01L23/53209 ,  C22C19/00 ,  C22C19/03 ,  C22C19/07 ,  C22C30/00 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76876 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L25/0652

Abstract: Provided herein are metal structures that may include a cobalt alloy, a nickel alloy, or nickel, as well as related devices and methods. The metal structures may be formed by chemical vapor deposition (CVD), and may include trace amounts of precursor materials used during the CVD process.

公开(公告)号：US20190393156A1

公开(公告)日：2019-12-26

申请号：US16015045

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Daniel J. Zierath ,  Michael McSwiney ,  Jason Farmer ,  Akm Shaestagir Chowdhury

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L25/065

Abstract: Provided herein are metal structures that may include a cobalt alloy, a nickel alloy, or nickel, as well as related devices and methods. The metal structures may be formed by chemical vapor deposition (CVD), and may include trace amounts of precursor materials used during the CVD process.