公开(公告)号：US20190393156A1

公开(公告)日：2019-12-26

申请号：US16015045

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Daniel J. Zierath ,  Michael McSwiney ,  Jason Farmer ,  Akm Shaestagir Chowdhury

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L25/065

Abstract: Provided herein are metal structures that may include a cobalt alloy, a nickel alloy, or nickel, as well as related devices and methods. The metal structures may be formed by chemical vapor deposition (CVD), and may include trace amounts of precursor materials used during the CVD process.

公开(公告)号：US11769729B2

公开(公告)日：2023-09-26

申请号：US16015045

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Daniel J. Zierath ,  Michael McSwiney ,  Jason Farmer ,  Akm Shaestagir Chowdhury

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L25/065 ,  C22C19/07 ,  C23C16/02 ,  C22C30/00 ,  C23C16/06 ,  C22C19/03 ,  C23C16/04 ,  C22C19/00

CPC classification number: H01L23/53209 ,  C22C19/00 ,  C22C19/03 ,  C22C19/07 ,  C22C30/00 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76876 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L25/0652

Abstract: Provided herein are metal structures that may include a cobalt alloy, a nickel alloy, or nickel, as well as related devices and methods. The metal structures may be formed by chemical vapor deposition (CVD), and may include trace amounts of precursor materials used during the CVD process.