公开(公告)号：US20230317687A1

公开(公告)日：2023-10-05

申请号：US17710662

申请日：2022-03-31

Applicant: Intel Corporation

Inventor： Bhupendra KUMAR ,  Khaled AHMED ,  Andrew William KEATES ,  Jay GUPTA

IPC: H01L25/075 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L2933/0066 ,  H01L33/62

Abstract: Embodiments disclosed herein include a display. In an embodiment, the display comprises a backplane, and circuitry on the backplane. In an embodiment, a pad with a first width is over the backplane and electrically coupled to the circuitry. In an embodiment, the pad comprises a conductive material. In an embodiment, the display further comprises a light emitting diode (LED) coupled to the pad, where the LED has a second width that is smaller than the first width.

公开(公告)号：US20230069054A1

公开(公告)日：2023-03-02

申请号：US17410257

申请日：2021-08-24

Applicant: Intel Corporation

Inventor： Souvik GHOSH ,  Han Wui THEN ,  Pratik KOIRALA ,  Tushar TALUKDAR ,  Paul NORDEEN ,  Nityan NAIR ,  Marko RADOSAVLJEVIC ,  Ibrahim BAN ,  Kimin JUN ,  Jay GUPTA ,  Paul B. FISCHER ,  Nicole K. THOMAS ,  Thomas HOFF ,  Samuel James BADER

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/66

Abstract: Gallium nitride (GaN) integrated circuit technology with multi-layer epitaxy and layer transfer is described. In an example, an integrated circuit structure includes a first channel structure including a plurality of alternating first channel layers and second channel layers, the first channel layers including gallium and nitrogen, and the second layers including gallium, aluminum and nitrogen. A second channel structure is bonded to the first channel structure. The second channel structure includes a plurality of alternating third channel layers and fourth channel layers, the third channel layers including gallium and nitrogen, and the fourth layers including gallium, aluminum and nitrogen.