公开(公告)号：US20240355934A1

公开(公告)日：2024-10-24

申请号：US18304659

申请日：2023-04-21

Applicant: Intel Corporation

Inventor： Mahmut Sami Kavrik ,  Tristan A. Tronic ,  Jennifer Lux ,  Uygar E. Avci ,  Kevin P. O'Brien

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/66969 ,  H01L29/0847 ,  H01L29/24

Abstract: Described herein are transistors with monolayer transition metal dichalcogenides (TMD) semiconductor material. TMD materials include combination of a transition metal (e.g., molybdenum or tungsten) and a chalcogen (e.g., sulfur or selenium) in a monolayer having a hexagonal crystal structure. A transistor has a single layer of TMD forming a channel region, and multiple layers of the TMD material at the source and drain regions. Upper portions of the multilayer TMD source and drain regions are doped, and conductive contacts are formed over the doped portions.

公开(公告)号：US20250113573A1

公开(公告)日：2025-04-03

申请号：US18478691

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Andrey Vyatskikh ,  Paul B. Fischer ,  Uygar E. Avci ,  Chelsey Dorow ,  Mahmut Sami Kavrik ,  Karthik Krishnaswamy ,  Chia-Ching Lin ,  Jennifer Lux ,  Kirby Maxey ,  Carl Hugo Naylor ,  Kevin P. O'Brien ,  Justin R. Weber

IPC: H01L29/18 ,  H01L21/02 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/78

Abstract: A low strain transfer protective layer is formed on a transition metal dichalcogenide (TMD) monolayer to enable the transfer of the TMD monolayer from a growth substrate to a target substrate with little or no strain-induced damage to the TMD monolayer. Transfer of a TMD monolayer from a growth substrate to a target substrate comprises two transfers, a first transfer from the growth substrate to a carrier wafer and a second transfer from the carrier wafer to the target substrate. Transfer of the TMD monolayer from the growth substrate to the carrier wafer comprises mechanically lifting off the TMD monolayer from the growth substrate. The low strain transfer protective layer can limit the amount of strain transferred from the carrier wafer to the TMD monolayer during lift-off. The carrier wafer and protective layer are separated from the TMD monolayer after attachment of the TMD monolayer to the target substrate.

公开(公告)号：US20240222126A1

公开(公告)日：2024-07-04

申请号：US18147644

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Mahmut Sami Kavrik ,  Uygar Avci ,  Brandon Holybee ,  Jennifer Lux ,  Kevin O'Brien ,  Shida Tan

IPC: H01L21/266 ,  H01L21/265

CPC classification number: H01L21/266 ,  H01L21/26506

Abstract: This disclosure describes systems, apparatus, methods, and devices related to fabrication using ion beams. The device may apply an ion beam targeted to at least one of one or more regions of a top layer, a metal layer placed on top of the top layer, or one or more ion stoppers placed on top of the top layer, wherein the ion beam is tuned using a predetermined energy range or a dosing level of ions to modify the material characteristics of the 2D material at the one or more regions of the top layer. The device may create a bond between the one or more 2D and metal layers to the one or more regions of the top layer where the material characteristics of the 2D material have been modified due to the impinging ion beam.