公开(公告)号：US20250029929A1

公开(公告)日：2025-01-23

申请号：US18907985

申请日：2024-10-07

Applicant: Intel Corporation

Inventor： Sanka GANESAN ,  Kevin MCCARTHY ,  Leigh M. TRIBOLET ,  Debendra MALLIK ,  Ravindranath V. MAHAJAN ,  Robert L. SANKMAN

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/00 ,  H01L25/065

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).

公开(公告)号：US20230260914A1

公开(公告)日：2023-08-17

申请号：US18139275

申请日：2023-04-25

Applicant: Intel Corporation

Inventor： Sanka GANESAN ,  Kevin MCCARTHY ,  Leigh M. TRIBOLET ,  Debendra MALLIK ,  Ravindranath V. MAHAJAN ,  Robert L. SANKMAN

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L23/5381 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/73204

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).

公开(公告)号：US20210035911A1

公开(公告)日：2021-02-04

申请号：US16524748

申请日：2019-07-29

Applicant: Intel Corporation

Inventor： Sanka GANESAN ,  Kevin MCCARTHY ,  Leigh M. TRIBOLET ,  Debendra MALLIK ,  Ravindranath V. MAHAJAN ,  Robert L. SANKMAN

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/498 ,  H01L23/367 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00 ,  H01L23/31 ,  H01L23/00

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).

公开(公告)号：US20210043570A1

公开(公告)日：2021-02-11

申请号：US16534027

申请日：2019-08-07

Applicant: Intel Corporation

Inventor： Sanka GANESAN ,  Kevin MCCARTHY ,  Leigh M. TRIBOLET ,  Debendra MALLIK ,  Ravindranath V. MAHAJAN ,  Robert L. SANKMAN

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge with a hybrid layer on a high-density packaging (HDP) substrate, a plurality of dies over the bridge and the HDP substrate, and a plurality of through mold vias (TMVs) on the HDP substrate. The bridge is coupled between the dies and the HDP substrate. The bridge is directly coupled to two dies of the dies with the hybrid layer, where a top surface of the hybrid layer of the bridge is directly on bottom surfaces of the dies, and where a bottom surface of the bridge is directly on a top surface of the HDP substrate. The TMVs couple the HDP substrate to the dies, and have a thickness that is substantially equal to a thickness of the bridge. The hybrid layer includes conductive pads, surface finish, and/or dielectric.

公开(公告)号：US20190304889A1

公开(公告)日：2019-10-03

申请号：US15941903

申请日：2018-03-30

Applicant: Intel Corporation

Inventor： Meizi JIAO ,  Chong ZHANG ,  Hongxia FENG ,  Kevin MCCARTHY

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H05K1/11 ,  H05K3/40 ,  H05K3/06

Abstract: Techniques for fabricating a package substrate comprising a via, a conductive line, and a pad are described. The package substrate can be included in a semiconductor package. For one technique, a package substrate includes: a pad in a dielectric layer; a via; and a conductive line. The via and the conductive line can be part of a structure. Alternatively, the conductive line can be adjacent to the via. The dielectric layer can include a pocket above the pad. One or more portions of the via may be formed in the pocket above the pad. Zero or more portions of the via can be formed on the dielectric layer outside the pocket. In some scenarios, no pad is above the via. The package substrate provides several advantages. One exemplary advantage is that the package substrate can assist with increasing an input/output density per millimeter per layer (IO/mm/layer) of the package substrate.