Wafer to wafer bonding with low wafer distortion

    公开(公告)号:US10720345B1

    公开(公告)日:2020-07-21

    申请号:US16125248

    申请日:2018-09-07

    申请人: Intel Corporation

    IPC分类号: H01L21/30 H01L21/67

    摘要: Techniques and mechanisms for forming a bond between two wafers. In an embodiment, a first wafer and a second wafer are positioned with respective wafer holders, and are deformed to form a first deformation of the first wafer and a second deformation of the second wafer. The first deformation and the second deformation are symmetrical with respect to a centerline which is between the first wafer and the second wafer. A portion of the first deformation is made to contact, and form a bond with, another portion of the second deformation. The bond is propagated along respective surfaces of the wafers to form a coupling therebetween. In another embodiment, one of the wafer holders comprises one of an array of elements to locally heat or cool a wafer, or an array of displacement stages to locally deform said wafer.