公开(公告)号：US20170141062A1

公开(公告)日：2017-05-18

申请号：US15419064

申请日：2017-01-30

Applicant: Intel Corporation

Inventor： Madhav Datta ,  Dave Emory ,  Subhash M. Joshi ,  Susanne Menezes ,  Doowon Suh

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/11009 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

公开(公告)号：US10037956B2

公开(公告)日：2018-07-31

申请号：US14596851

申请日：2015-01-14

Applicant: Intel Corporation

Inventor： Madhav Datta ,  Dave Emory ,  Subhash M. Joshi ,  Susanne Menezes ,  Doowon Suh

IPC: H01L23/488 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L24/11 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/11009 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

公开(公告)号：US20150132940A1

公开(公告)日：2015-05-14

申请号：US14596851

申请日：2015-01-14

Applicant: Intel Corporation

Inventor： Madhav Datta ,  Dave Emory ,  Subhash M. Joshi ,  Susanne Menezes ,  Doowon Suh

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/11009 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract translation: 本发明涉及一种用于电气装置的极限极限冶金堆，其包含设置在Ti粘附金属层上的至少一个铜层。 限流冶金叠层可阻止Sn向器件的上部金属化迁移。