公开(公告)号：US09530523B2

公开(公告)日：2016-12-27

申请号：US14314200

申请日：2014-06-25

Applicant: Intel Corporation

Inventor： Gayathri Rao Subbu ,  Kiran Pangal ,  Nathan Franklin

IPC: G11C29/00 ,  G11C29/52 ,  G11C13/00 ,  G06F11/10 ,  G11C7/04

CPC classification number: G11C29/52 ,  G06F11/1048 ,  G06F11/1068 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0033 ,  G11C2013/008 ,  G11C2213/76

Abstract: The present disclosure relates to thermal disturb as heater in cross-point memory. An apparatus includes a memory controller. The memory controller is configured to identify a target memory cell in response to at least one of a selection failure and a set fail memory read error associated with the target memory cell. The memory controller is further configured to apply a first sequence of recovery pulses to a first number of selected adjacent memory cells adjacent the target memory cell, the first sequence of recovery pulses configured to induce heating in the target memory cell.

Abstract translation: 本公开涉及作为交叉点存储器中的加热器的热干扰。 一种装置包括存储器控制器。 存储器控制器被配置为响应于与目标存储器单元相关联的选择故障和设置的故障存储器读取错误中的至少一个来识别目标存储器单元。 存储器控制器还被配置为将第一序列的恢复脉冲施加到与目标存储器单元相邻的第一数量的所选择的相邻存储单元，所述第一恢复脉冲序列被配置为在目标存储单元中感应加热。