公开(公告)号：US20160284404A1

公开(公告)日：2016-09-29

申请号：US14672130

申请日：2015-03-28

Applicant: Intel Corporation

Inventor： Sanjay Rangan ,  Kiran Pangal ,  Nevil N Gajera ,  Lu Liu ,  Gayathri Rao Subbu

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/16 ,  G11C13/0004 ,  G11C13/0061 ,  G11C2013/0078 ,  G11C2013/008 ,  G11C2013/0092 ,  H01L45/06 ,  H01L45/1286 ,  H01L45/141

Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.

Abstract translation: 相变材料可以通过多级设定过程进行设置。 设置控制逻辑可以将相变半导体材料（PM）加热到第一温度一段时间。 第一温度被配置成促进PM的结晶状态的成核。 控制逻辑可以将温度升高到第二温度持续第二时间段。 第二温度被配置为促进PM内的晶体生长。 晶体的成核和生长将PM设置为结晶状态。 相对于传统方法，多级升温可以提高设定过程的效率。

公开(公告)号：US10446229B2

公开(公告)日：2019-10-15

申请号：US15894822

申请日：2018-02-12

Applicant: Intel Corporation

Inventor： Sanjay Rangan ,  Kiran Pangal ,  Nevil N Gajera ,  Lu Liu ,  Gayathri Rao Subbu

IPC: G11C11/16 ,  G11C13/00 ,  G11C7/04 ,  H01L45/00

Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.

公开(公告)号：US10783966B2

公开(公告)日：2020-09-22

申请号：US16593530

申请日：2019-10-04

Applicant: Intel Corporation

Inventor： Sanjay Rangan ,  Kiran Pangal ,  Nevil N Gajera ,  Lu Liu ,  Gayathri Rao Subbu

IPC: G11C11/16 ,  G11C13/00 ,  G11C7/04 ,  H01L45/00

Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.

公开(公告)号：US09530523B2

公开(公告)日：2016-12-27

申请号：US14314200

申请日：2014-06-25

Applicant: Intel Corporation

Inventor： Gayathri Rao Subbu ,  Kiran Pangal ,  Nathan Franklin

IPC: G11C29/00 ,  G11C29/52 ,  G11C13/00 ,  G06F11/10 ,  G11C7/04

CPC classification number: G11C29/52 ,  G06F11/1048 ,  G06F11/1068 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0033 ,  G11C2013/008 ,  G11C2213/76

Abstract: The present disclosure relates to thermal disturb as heater in cross-point memory. An apparatus includes a memory controller. The memory controller is configured to identify a target memory cell in response to at least one of a selection failure and a set fail memory read error associated with the target memory cell. The memory controller is further configured to apply a first sequence of recovery pulses to a first number of selected adjacent memory cells adjacent the target memory cell, the first sequence of recovery pulses configured to induce heating in the target memory cell.

Abstract translation: 本公开涉及作为交叉点存储器中的加热器的热干扰。 一种装置包括存储器控制器。 存储器控制器被配置为响应于与目标存储器单元相关联的选择故障和设置的故障存储器读取错误中的至少一个来识别目标存储器单元。 存储器控制器还被配置为将第一序列的恢复脉冲施加到与目标存储器单元相邻的第一数量的所选择的相邻存储单元，所述第一恢复脉冲序列被配置为在目标存储单元中感应加热。

公开(公告)号：US09892785B2

公开(公告)日：2018-02-13

申请号：US15442594

申请日：2017-02-24

Applicant: Intel Corporation

Inventor： Sanjay Rangan ,  Kiran Pangal ,  Nevil N Gajera ,  Lu Liu ,  Gayathri Rao Subbu

IPC: G11C11/16 ,  G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/16 ,  G11C13/0004 ,  G11C13/0061 ,  G11C2013/0078 ,  G11C2013/008 ,  G11C2013/0092 ,  H01L45/06 ,  H01L45/1286 ,  H01L45/141

Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.

公开(公告)号：US09583187B2

公开(公告)日：2017-02-28

申请号：US14672130

申请日：2015-03-28

Applicant: Intel Corporation

Inventor： Sanjay Rangan ,  Kiran Pangal ,  Nevil N Gajera ,  Lu Liu ,  Gayathri Rao Subbu

IPC: G11C11/16 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/16 ,  G11C13/0004 ,  G11C13/0061 ,  G11C2013/0078 ,  G11C2013/008 ,  G11C2013/0092 ,  H01L45/06 ,  H01L45/1286 ,  H01L45/141

Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.

Abstract translation: 相变材料可以通过多级设定过程进行设置。 设置控制逻辑可以将相变半导体材料（PM）加热到第一温度一段时间。 第一温度被配置成促进PM的结晶状态的成核。 控制逻辑可以将温度升高到第二温度持续第二时间段。 第二温度被配置为促进PM内的晶体生长。 晶体的成核和生长将PM设置为结晶状态。 相对于传统方法，多级升温可以提高设定过程的效率。