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公开(公告)号：US20160284404A1
公开(公告)日：2016-09-29
申请号：US14672130
申请日：2015-03-28
Applicant: Intel Corporation
Inventor： Sanjay Rangan , Kiran Pangal , Nevil N Gajera , Lu Liu , Gayathri Rao Subbu
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C7/04 , G11C11/16 , G11C13/0004 , G11C13/0061 , G11C2013/0078 , G11C2013/008 , G11C2013/0092 , H01L45/06 , H01L45/1286 , H01L45/141
Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.
Abstract translation: 相变材料可以通过多级设定过程进行设置。 设置控制逻辑可以将相变半导体材料（PM）加热到第一温度一段时间。 第一温度被配置成促进PM的结晶状态的成核。 控制逻辑可以将温度升高到第二温度持续第二时间段。 第二温度被配置为促进PM内的晶体生长。 晶体的成核和生长将PM设置为结晶状态。 相对于传统方法，多级升温可以提高设定过程的效率。
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Patent Agency Ranking
公开(公告)号：US10446229B2
公开(公告)日：2019-10-15
申请号：US15894822
申请日：2018-02-12
Applicant: Intel Corporation
Inventor： Sanjay Rangan , Kiran Pangal , Nevil N Gajera , Lu Liu , Gayathri Rao Subbu
Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.
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公开(公告)号：US10783966B2
公开(公告)日：2020-09-22
申请号：US16593530
申请日：2019-10-04
Applicant: Intel Corporation
Inventor： Sanjay Rangan , Kiran Pangal , Nevil N Gajera , Lu Liu , Gayathri Rao Subbu
Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.
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公开(公告)号：US10269396B2
公开(公告)日：2019-04-23
申请号：US16036756
申请日：2018-07-16
Applicant: Intel Corporation
Inventor： Rakesh Jeyasingh , Nevil N Gajera , Mase J. Taub , Kiran Pangal
Abstract: Examples may include techniques to mitigate bias drift for memory cells of a memory device. A first memory cell coupled with a first word-line and a bit-line is selected for a write operation. A second memory cell coupled with a second word-line and the bit-line is de-selected for the write operation. First and second bias voltages are applied to the first word-line and the bit-line during the write operation to program the first memory cell. A third bias voltage is applied to the second word-line during the write operation to reduce or mitigate voltage bias to the second memory cell due to the second bias voltage applied to the bit-line to program the first memory cell.
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公开(公告)号：US09892785B2
公开(公告)日：2018-02-13
申请号：US15442594
申请日：2017-02-24
Applicant: Intel Corporation
Inventor： Sanjay Rangan , Kiran Pangal , Nevil N Gajera , Lu Liu , Gayathri Rao Subbu
CPC classification number: G11C13/0069 , G11C7/04 , G11C11/16 , G11C13/0004 , G11C13/0061 , G11C2013/0078 , G11C2013/008 , G11C2013/0092 , H01L45/06 , H01L45/1286 , H01L45/141
Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.
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公开(公告)号：US09583187B2
公开(公告)日：2017-02-28
申请号：US14672130
申请日：2015-03-28
Applicant: Intel Corporation
Inventor： Sanjay Rangan , Kiran Pangal , Nevil N Gajera , Lu Liu , Gayathri Rao Subbu
CPC classification number: G11C13/0069 , G11C7/04 , G11C11/16 , G11C13/0004 , G11C13/0061 , G11C2013/0078 , G11C2013/008 , G11C2013/0092 , H01L45/06 , H01L45/1286 , H01L45/141
Abstract: Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.
Abstract translation: 相变材料可以通过多级设定过程进行设置。 设置控制逻辑可以将相变半导体材料（PM）加热到第一温度一段时间。 第一温度被配置成促进PM的结晶状态的成核。 控制逻辑可以将温度升高到第二温度持续第二时间段。 第二温度被配置为促进PM内的晶体生长。 晶体的成核和生长将PM设置为结晶状态。 相对于传统方法，多级升温可以提高设定过程的效率。
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