UNDERFILL MATERIAL FLOW CONTROL FOR REDUCED DIE-TO-DIE SPACING IN SEMICONDUCTOR PACKAGES

    公开(公告)号:US20190148268A1

    公开(公告)日:2019-05-16

    申请号:US16228378

    申请日:2018-12-20

    Abstract: Underfill material flow control for reduced die-to-die spacing in semiconductor packages and the resulting semiconductor packages are described. In an example, a semiconductor apparatus includes first and second semiconductor dies, each having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a common semiconductor package substrate by a plurality of conductive contacts, the first and second semiconductor dies separated by a spacing. A barrier structure is disposed between the first semiconductor die and the common semiconductor package substrate and at least partially underneath the first semiconductor die. An underfill material layer is in contact with the second semiconductor die and with the barrier structure, but not in contact with the first semiconductor die.

    STRETCHABLE ELECTRONICS FABRICATION METHOD WITH STRAIN REDISTRIBUTION LAYER

    公开(公告)号:US20180019213A1

    公开(公告)日:2018-01-18

    申请号:US15546958

    申请日:2015-03-11

    Abstract: Embodiments of the invention include a microelectronic device and methods for forming a microelectronic device. In an embodiment, the microelectronic device includes a semiconductor die that has one or more die contacts that are each electrically coupled to a contact pad by a conductive trace. The semiconductor die may have a first elastic modulus. The microelectronic device may also include an encapsulation layer over the semiconductor die and the conductive trace. The encapsulation layer may have a second elastic modulus that is less than the first elastic modulus. The microelectronic device may also include a first strain redistribution layer within the encapsulation layer. The first strain redistribution layer may have a footprint that covers the semiconductor die and a portion of the conductive traces. The strain redistribution layer may have a third elastic modulus that is less than the first elastic modulus and greater than the second elastic modulus.

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