OPEN CAVITY BRIDGE CO-PLANAR PLACEMENT ARCHITECTURES AND PROCESSES

    公开(公告)号:US20210305132A1

    公开(公告)日:2021-09-30

    申请号:US16828405

    申请日:2020-03-24

    Abstract: Embodiments disclosed herein include multi-die packages with open cavity bridges. In an example, an electronic apparatus includes a package substrate having alternating metallization layers and dielectric layers. The package substrate includes a first plurality of substrate pads and a second plurality of substrate pads. The package substrate also includes an open cavity between the first plurality of substrate pads and the second plurality of substrate pads, the open cavity having a bottom and sides. The electronic apparatus also includes a bridge die in the open cavity, the bridge die including a first plurality of bridge pads, a second plurality of bridge pads, and conductive traces. An adhesive layer couples the bridge die to the bottom of the open cavity. A gap is laterally between the bridge die and the sides of the open cavity, the gap surrounding the bridge die.

    SUBSTRATE WITH THERMAL INSULATION

    公开(公告)号:US20210242107A1

    公开(公告)日:2021-08-05

    申请号:US16781563

    申请日:2020-02-04

    Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to a substrate that includes a first region to be coupled with a die, and a second region separate and distinct from the first region that has a lower thermal conductivity than the first region, where the second region is to thermally insulate the first region when the die is coupled to the first region. The thermal insulation of the second region may be used during a TCB process to increase the quality of each of the interconnects of the die by promoting a higher temperature at the connection points to facilitate full melting of solder.

    UNDERFILL MATERIAL FLOW CONTROL FOR REDUCED DIE-TO-DIE SPACING IN SEMICONDUCTOR PACKAGES

    公开(公告)号:US20190148268A1

    公开(公告)日:2019-05-16

    申请号:US16228378

    申请日:2018-12-20

    Abstract: Underfill material flow control for reduced die-to-die spacing in semiconductor packages and the resulting semiconductor packages are described. In an example, a semiconductor apparatus includes first and second semiconductor dies, each having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a common semiconductor package substrate by a plurality of conductive contacts, the first and second semiconductor dies separated by a spacing. A barrier structure is disposed between the first semiconductor die and the common semiconductor package substrate and at least partially underneath the first semiconductor die. An underfill material layer is in contact with the second semiconductor die and with the barrier structure, but not in contact with the first semiconductor die.

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