公开(公告)号：US09269567B2

公开(公告)日：2016-02-23

申请号：US14109622

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Chen-An Chen ,  Tony P. Chiang ,  Martin Romero ,  James Tsung

IPC: C23C16/455 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract translation: 描述了用于半导体衬底和HPC方法的高生产率组合（HPC）处理的装置。 一种装置包括一个淋浴喷头和两个或多个压力控制单向阀，连接到喷头并用于控制不同处理气体进入喷头的流量。 压力控制单向阀不受任何控制系统的外部控制。 相反，这些阀响应预设条件（例如压力差和/或流量差）打开和关闭。 这种压力控制单向阀的一个例子是止回阀。 这些阀通常仅在一个方向上流动，即进入喷头。 此外，缺乏外部控制和特定的机械设计允许将这些压力控制的单向阀定位在靠近喷头处，从而减小阀和喷头之间的死体积并且还在高温下操作这些阀。

公开(公告)号：US09087864B2

公开(公告)日：2015-07-21

申请号：US14135307

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Chen-An Chen ,  Tony P. Chiang ,  Frank Greer ,  Martin Romero ,  James Tsung

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/677 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/04 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6719 ,  H01L21/67207

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract translation: 在一些实施例中，提供了在高生产率组合（HPC）系统中提供灵活处理的装置。 该装置允许可互换的功能，包括沉积，等离子体处理，离子束处理，原位退火和原位计量。 该设备被设计为使得功能可以集成在单个处理室内以增强灵活性。

公开(公告)号：US20150170908A1

公开(公告)日：2015-06-18

申请号：US14109622

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Chen-An Chen ,  Tony P. Chiang ,  Martin Romero ,  James Tsung

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02271 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

Abstract: Provided are apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods. An apparatus includes a showerhead and two or more self-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The self-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such self-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these self-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract translation: 提供了用于半导体衬底和HPC方法的高生产率组合（HPC）处理的装置。 一种装置包括一个淋浴喷头和两个或多个连接到喷头的自控单向阀，用于控制不同处理气体进入喷头的流量。 自控单向阀不受任何控制系统的外部控制。 相反，这些阀响应预设条件（例如压力差和/或流量差）打开和关闭。 这种自控单向阀的一个例子是止回阀。 这些阀通常仅在一个方向上流动，即进入喷头。 此外，缺乏外部控制和特定的机械设计允许将这些自我控制的单向阀定位在靠近喷淋头的位置，从而减小了阀和喷头之间的死体积并且还在高温下操作这些阀。

公开(公告)号：US20150179487A1

公开(公告)日：2015-06-25

申请号：US14135307

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Chen-An Chen ,  Tony P. Chiang ,  Frank Greer ,  Martin Romero ,  James Tsung

IPC: H01L21/677 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/04 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6719 ,  H01L21/67207

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract translation: 在一些实施例中，提供了在高生产率组合（HPC）系统中提供灵活处理的装置。 该装置允许可互换的功能，包括沉积，等离子体处理，离子束处理，原位退火和原位计量。 该设备被设计为使得功能可以集成在单个处理室内以增强灵活性。

公开(公告)号：US20150176124A1

公开(公告)日：2015-06-25

申请号：US14135266

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Khaled Ahmed ,  Chen-An Chen ,  Wenxian Zhu

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45551

Abstract: Systems and methods for rapid generation of ALD saturation curves using segmented spatial ALD are disclosed. Methods include introducing a substrate, having a plurality of substrate segment regions, into a processing chamber. The substrate may be disposed upon a pedestal within the chamber. Sequentially exposing the plurality of segment regions to a precursor within the chamber at a first processing temperature. Afterwards, purging the precursor from the chamber and then sequentially exposing each plurality of segment regions to a reactant within the chamber at the first processing temperature. Afterwards, purging the reactant from the chamber. Repeat sequentially exposing the plurality of segment regions to the precursor and the reactant for a plurality of cycles. Each segment region may be sequentially exposed to the precursor for a unique processing time. The pedestal may be rotated prior to exposing each next segment region to the precursor and the reactant.

Abstract translation: 公开了使用分段空间ALD快速产生ALD饱和曲线的系统和方法。 方法包括将具有多个衬底段区域的衬底引入处理室。 衬底可以设置在腔室内的基座上。 在第一处理温度下将多个区段区域顺序暴露于室内的前体。 然后，从室中吹扫前体，然后在第一处理温度下将每个多个区段顺序地暴露于室内的反应物。 之后，从反应室中清除反应物。 重复连续暴露多个段区域到前体和反应物多个循环。 每个段区域可以顺序地暴露于前体以获得独特的处理时间。 在将每个下一个区段暴露于前体和反应物之前，基座可以旋转。