公开(公告)号：US20150184287A1

公开(公告)日：2015-07-02

申请号：US14140874

申请日：2013-12-26

Applicant: Intermolecular, Inc.

Inventor： James Tsung ,  Tony P. Chiang ,  Chien-Lan Hsueh

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/04

CPC classification number: C23C16/45561 ,  B01J2219/00394 ,  B01J2219/00412 ,  B01J2219/0043 ,  B01J2219/00443 ,  C23C16/04 ,  C40B60/14

Abstract: Embodiments described herein provide systems and methods for performing vapor deposition processes on substrates. A housing defining a processing chamber is provided. A substrate support is positioned within the processing chamber and configured to support a substrate. A fluid supply system including a plurality precursor sources is included. A fluid conduit assembly is coupled to the fluid supply system and configurable to selectively expose a first site-isolated region defined on the substrate to the respective precursors of a first and a second of the plurality of precursor sources and selectively expose a second site-isolated region defined on the substrate to the respective precursors of a third and a fourth of the plurality of precursor sources.

Abstract translation: 本文描述的实施例提供了用于在衬底上进行气相沉积工艺的系统和方法。 提供了限定处理室的壳体。 衬底支撑件定位在处理室内并且构造成支撑衬底。 包括包括多个前体源的流体供应系统。 流体导管组件联接到流体供应系统并且可配置为选择性地将限定在衬底上的第一位置隔离区域暴露于多个前体源中的第一和第二前体源的相应前体，并选择性地暴露第二位点隔离 在所述衬底上限定到所述多个前体源中的第三和第四前体的各个前体的区域。

公开(公告)号：US20150179487A1

公开(公告)日：2015-06-25

申请号：US14135307

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Chen-An Chen ,  Tony P. Chiang ,  Frank Greer ,  Martin Romero ,  James Tsung

IPC: H01L21/677 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/04 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6719 ,  H01L21/67207

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract translation: 在一些实施例中，提供了在高生产率组合（HPC）系统中提供灵活处理的装置。 该装置允许可互换的功能，包括沉积，等离子体处理，离子束处理，原位退火和原位计量。 该设备被设计为使得功能可以集成在单个处理室内以增强灵活性。

公开(公告)号：US20140273309A1

公开(公告)日：2014-09-18

申请号：US14051287

申请日：2013-10-10

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Jay Dedontney ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Martin Romero ,  Sunil Shanker ,  James Tsung ,  J. Watanabe

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract translation: 可以通过优选地将表面暴露于由等离子体源产生的等离子体物质的选定子集中来改善表面的远程等离子体处理，例如在半导体制造中。 所选择的物种到达表面的可能性，或未被选择的物质在到达表面之前被淬灭或以其他方式转化或转移的可能性可以通过在等离子体源或处理室，变化室中引入具有选定性质的附加气体来操纵 压力或流量以增加或减少碰撞，或改变注射口，管道和由物种穿过的其它通道的尺寸或几何形状。 一些示例性过程优先用相对低能量的基团处理表面，实时地改变表面处的自由基的浓度，或者在相同的单元过程中清洁和钝化。

公开(公告)号：US20140166840A1

公开(公告)日：2014-06-19

申请号：US13716044

申请日：2012-12-14

Applicant: INTERMOLECULAR, INC.

Inventor： Wayne R. French ,  Kent Riley Child ,  Alonzo T. Collins ,  Jay B. Dedontney ,  Richard R. Endo ,  Aaron T. Francis ,  Zachary Fresco ,  Edward L. Haywood ,  Ashley David Lacey ,  Monica Sawkar Mathur ,  James Tsung ,  Danny Wang ,  Kenneth A. Williams ,  Maosheng Zhao

IPC: H01L21/687

CPC classification number: H01L21/68728 ,  H01L21/68757

Abstract: A substrate carrier is provided. The substrate carrier includes a base for supporting a substrate. A plurality of support tabs is affixed to a surface of the base. The plurality of support tabs have a cavity defined within an inner region of each support tab of the plurality of support tabs. A plurality of protrusions extends from the surface of the base, wherein one of the plurality of protrusions mates with one cavity to support one of the plurality of support tabs. A film is deposited over the surface of the base, surfaces of the plurality of support tabs and surfaces of the plurality of protrusions.

Abstract translation: 提供衬底载体。 衬底载体包括用于支撑衬底的基底。 多个支撑片固定到基座的表面上。 多个支撑突片具有限定在多个支撑突片中的每个支撑突片的内部区域内的空腔。 多个突起从基座的表面延伸，其中多个突起中的一个与一个空腔配合，以支撑多个支撑突片中的一个。 薄膜沉积在基底的表面上，多个支撑突片的表面和多个突起的表面。

公开(公告)号：US08500908B2

公开(公告)日：2013-08-06

申请号：US13656118

申请日：2012-10-19

Applicant: Intermolecular, Inc.

Inventor： Rick Endo ,  James Tsung ,  Kurt H Weiner

IPC: C23C16/04

CPC classification number: H01L21/67225 ,  C23C16/042 ,  H01L21/6719 ,  H01L21/68742 ,  Y10S206/832

Abstract: A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extensions for the mask enable independent movement of the wafer and the mask. In one embodiment, the extensions are affixed to an annular ring which is capable of moving in a vertical direction within the processing chamber. A processing chamber, a mask, and a method for combinatorially processing a substrate are also provided.

Abstract translation: 提供了用于在处理室中独立地支撑晶片和掩模的结构。 该结构包括一组用于支撑晶片的延伸部和一组支撑该掩模的延伸部。 用于晶片的一组扩展和用于掩模的一组扩展使得能够独立地移动晶片和掩模。 在一个实施例中，延伸部固定到能够在处理室内沿垂直方向移动的环形环。 还提供了处理室，掩模和用于组合处理衬底的方法。

公开(公告)号：US09269567B2

公开(公告)日：2016-02-23

申请号：US14109622

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Chen-An Chen ,  Tony P. Chiang ,  Martin Romero ,  James Tsung

IPC: C23C16/455 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract translation: 描述了用于半导体衬底和HPC方法的高生产率组合（HPC）处理的装置。 一种装置包括一个淋浴喷头和两个或多个压力控制单向阀，连接到喷头并用于控制不同处理气体进入喷头的流量。 压力控制单向阀不受任何控制系统的外部控制。 相反，这些阀响应预设条件（例如压力差和/或流量差）打开和关闭。 这种压力控制单向阀的一个例子是止回阀。 这些阀通常仅在一个方向上流动，即进入喷头。 此外，缺乏外部控制和特定的机械设计允许将这些压力控制的单向阀定位在靠近喷头处，从而减小阀和喷头之间的死体积并且还在高温下操作这些阀。

公开(公告)号：US09087864B2

公开(公告)日：2015-07-21

申请号：US14135307

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Chen-An Chen ,  Tony P. Chiang ,  Frank Greer ,  Martin Romero ,  James Tsung

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/677 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/04 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6719 ,  H01L21/67207

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract translation: 在一些实施例中，提供了在高生产率组合（HPC）系统中提供灵活处理的装置。 该装置允许可互换的功能，包括沉积，等离子体处理，离子束处理，原位退火和原位计量。 该设备被设计为使得功能可以集成在单个处理室内以增强灵活性。

公开(公告)号：US20150093898A1

公开(公告)日：2015-04-02

申请号：US14562952

申请日：2014-12-08

Applicant: Intermolecular, Inc.

Inventor： Rick Endo ,  Jeremy Cheng ,  Indranil De ,  James Tsung ,  Kurt Weiner ,  Maosheng Zhao

IPC: H01L21/3205

CPC classification number: H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

Abstract translation: 提供组合处理室。 组合处理室被配置为隔离可旋转的衬底支撑件的径向部分，该可旋转衬底支撑件又被配置为支撑衬底。 在一个实施例中，腔室包括多个聚集过程头。 在一个实施例中，具有设置在基板支撑件和工艺头之间的基板的插入件限定了用于沉积工艺的约束区域。 基板具有能够将沉积材料接近基板的开口。 通过基板的旋转和开口的移动，基板的多个区域是可访问的，以在单个基板上执行组合处理。

公开(公告)号：US20140183161A1

公开(公告)日：2014-07-03

申请号：US13729407

申请日：2012-12-28

Applicant: INTERMOLECULAR, INC.

Inventor： Sandip Niyogi ,  James Tsung ,  J. Watanabe

IPC: C23F1/08 ,  C23F1/00

CPC classification number: B01J19/0046 ,  B01J2219/00427 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00745 ,  C23C16/042 ,  C23C16/50

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A substrate processing tool includes a housing having a sidewall and a lid. The housing defines a processing chamber. A substrate support is configured to support a substrate within the processing chamber. A plasma generation source is coupled to the housing and in fluid communication with the processing chamber through the lid of the housing. The plasma generation source is configured to provide a plasma activated species into the processing chamber. A mask is positioned within the processing chamber to at least partially shield the substrate from the plasma activated species. The mask includes a plurality of openings configured such that when the mask is in first and second positions, the plasma activated species passes through a respective first and second of the plurality of openings and causes first and second regions on the substrate to be processed.

Abstract translation: 本文提供的实施例描述了用于处理衬底的方法和系统。 基板处理工具包括具有侧壁和盖的壳体。 壳体限定处理室。 衬底支撑件构造成支撑处理室内的衬底。 等离子体产生源通过壳体的盖连接到壳体并与处理室流体连通。 等离子体产生源被配置成将等离子体活化物质提供到处理室中。 掩模位于处理室内以至少部分地将衬底与等离子体活化物质屏蔽。 掩模包括多个开口，其被构造成使得当掩模处于第一和第二位置时，等离子体活化物质通过多个开口中相应的第一和第二开口，并且使基板上的第一和第二区域被处理。

公开(公告)号：US20150170908A1

公开(公告)日：2015-06-18

申请号：US14109622

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Chen-An Chen ,  Tony P. Chiang ,  Martin Romero ,  James Tsung

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02271 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

Abstract: Provided are apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods. An apparatus includes a showerhead and two or more self-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The self-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such self-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these self-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract translation: 提供了用于半导体衬底和HPC方法的高生产率组合（HPC）处理的装置。 一种装置包括一个淋浴喷头和两个或多个连接到喷头的自控单向阀，用于控制不同处理气体进入喷头的流量。 自控单向阀不受任何控制系统的外部控制。 相反，这些阀响应预设条件（例如压力差和/或流量差）打开和关闭。 这种自控单向阀的一个例子是止回阀。 这些阀通常仅在一个方向上流动，即进入喷头。 此外，缺乏外部控制和特定的机械设计允许将这些自我控制的单向阀定位在靠近喷淋头的位置，从而减小了阀和喷头之间的死体积并且还在高温下操作这些阀。