公开(公告)号：US20150170908A1

公开(公告)日：2015-06-18

申请号：US14109622

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Chen-An Chen ,  Tony P. Chiang ,  Martin Romero ,  James Tsung

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02271 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

Abstract: Provided are apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods. An apparatus includes a showerhead and two or more self-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The self-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such self-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these self-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract translation: 提供了用于半导体衬底和HPC方法的高生产率组合（HPC）处理的装置。 一种装置包括一个淋浴喷头和两个或多个连接到喷头的自控单向阀，用于控制不同处理气体进入喷头的流量。 自控单向阀不受任何控制系统的外部控制。 相反，这些阀响应预设条件（例如压力差和/或流量差）打开和关闭。 这种自控单向阀的一个例子是止回阀。 这些阀通常仅在一个方向上流动，即进入喷头。 此外，缺乏外部控制和特定的机械设计允许将这些自我控制的单向阀定位在靠近喷淋头的位置，从而减小了阀和喷头之间的死体积并且还在高温下操作这些阀。

公开(公告)号：US20150179487A1

公开(公告)日：2015-06-25

申请号：US14135307

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Chen-An Chen ,  Tony P. Chiang ,  Frank Greer ,  Martin Romero ,  James Tsung

IPC: H01L21/677 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/04 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6719 ,  H01L21/67207

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract translation: 在一些实施例中，提供了在高生产率组合（HPC）系统中提供灵活处理的装置。 该装置允许可互换的功能，包括沉积，等离子体处理，离子束处理，原位退火和原位计量。 该设备被设计为使得功能可以集成在单个处理室内以增强灵活性。

公开(公告)号：US20140273309A1

公开(公告)日：2014-09-18

申请号：US14051287

申请日：2013-10-10

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Jay Dedontney ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Martin Romero ,  Sunil Shanker ,  James Tsung ,  J. Watanabe

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract translation: 可以通过优选地将表面暴露于由等离子体源产生的等离子体物质的选定子集中来改善表面的远程等离子体处理，例如在半导体制造中。 所选择的物种到达表面的可能性，或未被选择的物质在到达表面之前被淬灭或以其他方式转化或转移的可能性可以通过在等离子体源或处理室，变化室中引入具有选定性质的附加气体来操纵 压力或流量以增加或减少碰撞，或改变注射口，管道和由物种穿过的其它通道的尺寸或几何形状。 一些示例性过程优先用相对低能量的基团处理表面，实时地改变表面处的自由基的浓度，或者在相同的单元过程中清洁和钝化。

公开(公告)号：US09269567B2

公开(公告)日：2016-02-23

申请号：US14109622

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Chen-An Chen ,  Tony P. Chiang ,  Martin Romero ,  James Tsung

IPC: C23C16/455 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract translation: 描述了用于半导体衬底和HPC方法的高生产率组合（HPC）处理的装置。 一种装置包括一个淋浴喷头和两个或多个压力控制单向阀，连接到喷头并用于控制不同处理气体进入喷头的流量。 压力控制单向阀不受任何控制系统的外部控制。 相反，这些阀响应预设条件（例如压力差和/或流量差）打开和关闭。 这种压力控制单向阀的一个例子是止回阀。 这些阀通常仅在一个方向上流动，即进入喷头。 此外，缺乏外部控制和特定的机械设计允许将这些压力控制的单向阀定位在靠近喷头处，从而减小阀和喷头之间的死体积并且还在高温下操作这些阀。

公开(公告)号：US09087864B2

公开(公告)日：2015-07-21

申请号：US14135307

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Chen-An Chen ,  Tony P. Chiang ,  Frank Greer ,  Martin Romero ,  James Tsung

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/677 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/04 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6719 ,  H01L21/67207

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract translation: 在一些实施例中，提供了在高生产率组合（HPC）系统中提供灵活处理的装置。 该装置允许可互换的功能，包括沉积，等离子体处理，离子束处理，原位退火和原位计量。 该设备被设计为使得功能可以集成在单个处理室内以增强灵活性。