公开(公告)号：US10553781B2

公开(公告)日：2020-02-04

申请号：US15467609

申请日：2017-03-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen L. Brown ,  Guohan Hu ,  Jonathan Z. Sun ,  Daniel C. Worledge

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A method for forming a memory device that includes providing a free layer of an alloy of cobalt (Co), iron (Fe) and boron (B) overlying a reference layer; and forming metal layer comprising a boron (B) sink composition atop the free layer. Boron (B) may be diffused from the free layer to the metal layer comprising the boron sink composition. At least a portion of the metal layer including the boron (B) sink composition is removed. A metal oxide is formed atop the free layer. The free layer may be a crystalline cobalt and iron alloy. An interface between the metal oxide and free layer can provide perpendicular magnetic anisotropy character.

公开(公告)号：US10332576B2

公开(公告)日：2019-06-25

申请号：US15616283

申请日：2017-06-07

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

公开(公告)号：US10294561B2

公开(公告)日：2019-05-21

申请号：US15911950

申请日：2018-03-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: C23C16/06 ,  C23C14/02 ,  C23C14/14 ,  C23C16/02 ,  C23C18/16 ,  C23C18/50 ,  C23C18/31

Abstract: A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.

公开(公告)号：US10236438B2

公开(公告)日：2019-03-19

申请号：US15652482

申请日：2017-07-18

Applicant: International Business Machines Corporation ,  Crocus Technology SA

Inventor： Anthony J. Annunziata ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  G11C11/56

Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.

公开(公告)号：US20180373588A1

公开(公告)日：2018-12-27

申请号：US15630538

申请日：2017-06-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John K. DeBrosse ,  Daniel C. Worledge

IPC: G06F11/10 ,  H03M13/27

CPC classification number: G06F11/1016 ,  G11C11/16 ,  G11C29/06 ,  G11C29/34 ,  G11C29/42 ,  G11C29/4401 ,  G11C29/52 ,  G11C29/789 ,  G11C2029/0403 ,  G11C2029/4402 ,  H01L27/222 ,  H01L43/08 ,  H03M13/2764 ,  H04L1/0071

Abstract: A memory device, a memory system, and corresponding methods are provided. The memory device includes a non-volatile random access memory. The non-volatile memory includes a suspect bit register configured to store addresses of bits that are determined to have had errors. The non-volatile memory further includes a bad bit register configured to store addresses of bits that both (i) appeared in the suspect bit register due to a first error and (ii) are determined to have had a second error. Hence, the memory device overcomes the aforementioned intrinsic write-error-rate by identifying the bad bits so they can be fused out, thus avoiding errors during use of the non-volatile random access memory.

公开(公告)号：US20180358066A1

公开(公告)日：2018-12-13

申请号：US15616297

申请日：2017-06-07

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Jeong-Heon Park ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

公开(公告)号：US20180358065A1

公开(公告)日：2018-12-13

申请号：US15616283

申请日：2017-06-07

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

公开(公告)号：US10096351B2

公开(公告)日：2018-10-09

申请号：US15602806

申请日：2017-05-23

Applicant: International Business Machines Corporation

Inventor： Daniel C. Worledge

IPC: G11C11/18 ,  G11C11/16 ,  H01L43/06 ,  H01L43/04 ,  H01L43/10 ,  H01L27/22

Abstract: Techniques for writing magnetic random access memory (MRAM) using the spin hall effect with a self-reference read are provided. In one aspect, an MRAM device is provided. The MRAM device includes: a plurality of first spin hall wires oriented orthogonal to a plurality of second spin hall wires; a plurality of magnetic memory cells configured in an array between the first spin hall wires and the second spin hall wires; and a plurality of transistors connected to the magnetic memory cells by the first spin hall wires. Methods of operating an MRAM device are also provided.

公开(公告)号：US10083730B1

公开(公告)日：2018-09-25

申请号：US15794425

申请日：2017-10-26

Applicant: International Business Machines Corporation

Inventor： Daniel C. Worledge

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element having a reference layer formed from a reference layer material having a fixed magnetization direction, along with a free layer formed from a free layer material having a switchable magnetization direction. The MTJ is configured to receive a write pulse having a write-pulse and spin-transfer-torque (WP-STT) start time, a WP-STT start segment duration and a write pulse duration. The WP-STT start segment duration is less than the write pulse duration. The fixed magnetization direction is configured to form an angle between the fixed magnetization direction and the switchable magnetization direction. The angle is sufficient to generate spin torque electrons in the reference layer material at the WP-STT start time. The spin torque electrons generated in the reference layer material is sufficient to initiate switching of the switchable magnetization direction at the WP-STT start time.

公开(公告)号：US20180195168A1

公开(公告)日：2018-07-12

申请号：US15911950

申请日：2018-03-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: C23C16/06 ,  C23C18/31 ,  C23C14/02 ,  C23C14/14 ,  C23C16/02

CPC classification number: C23C16/06 ,  C23C14/024 ,  C23C14/14 ,  C23C16/0272 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/31 ,  C23C18/50

Abstract: A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.