Microprocessor image correction and method for the detection of potential defects
    1.
    发明授权
    Microprocessor image correction and method for the detection of potential defects 有权
    微处理器图像校正和检测潜在缺陷的方法

    公开(公告)号:US08987010B1

    公开(公告)日:2015-03-24

    申请号:US14013067

    申请日:2013-08-29

    CPC classification number: H01L22/12 G06T7/001 G06T2207/30148

    Abstract: Systems and methods are provided for developing usable chip images in order to detect and screen defects or anomalies in a manufacturing environment. More specifically, a method is provided for manufacturing at least one wafer or chip. The method includes obtaining image data of the at least one wafer or chip. The method further includes correcting the image data to remove normal variation within the image data. The method further includes comparing the corrected image data to image data for at least one other wafer or chip to determine whether the corrected image data for the at least one wafer or chip shows a defect or anomaly beyond that of the normal variation. The method further includes placing the at least one wafer or chip into a category of fabrication based on the comparison.

    Abstract translation: 提供了系统和方法来开发可用的芯片图像,以便在制造环境中检测和屏蔽缺陷或异常现象。 更具体地,提供了用于制造至少一个晶片或芯片的方法。 该方法包括获得至少一个晶片或芯片的图像数据。 该方法还包括校正图像数据以消除图像数据内的正常变化。 该方法还包括将校正的图像数据与至少一个其它晶片或芯片的图像数据进行比较,以确定至少一个晶片或芯片的校正图像数据是否显示超出正常变化的缺陷或异常。 该方法还包括基于该比较将至少一个晶片或芯片放置在一类制造中。

    DETERMINING THERMAL PROFILES OF SEMICONDUCTOR STRUCTURES
    2.
    发明申请
    DETERMINING THERMAL PROFILES OF SEMICONDUCTOR STRUCTURES 有权
    确定半导体结构的热分布

    公开(公告)号:US20150362373A1

    公开(公告)日:2015-12-17

    申请号:US14302934

    申请日:2014-06-12

    Abstract: According to embodiments of the present invention, a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate. The emitting layer is excited for a first predetermined time period. A first luminescent intensity value of the emitting layer is determined. In response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period, a second luminescent intensity value of the emitting layer is determined. A thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer. The thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition.

    Abstract translation: 根据本发明的实施例,在半导体衬底的表面的至少一部分上形成半导体衬底。 发光层被激发第一预定时间段。 确定发光层的第一发光强度值。 响应于将半导体衬底和发光层暴露于第二预定时间段的条件,确定发光层的第二发光强度值。 使用发光层的第一发光强度值和第二发光强度值来确定至少半导体衬底的表面部分的热分布。 热分布至少反映在暴露于该条件之后关于条件和半导体衬底中的一个或多个的信息。

    Temperature stabilization in semiconductors using the magnetocaloric effect
    3.
    发明授权
    Temperature stabilization in semiconductors using the magnetocaloric effect 有权
    使用磁热效应的半导体中的温度稳定性

    公开(公告)号:US09222707B2

    公开(公告)日:2015-12-29

    申请号:US13766846

    申请日:2013-02-14

    Abstract: Apparatus and methods incorporate magnetocaloric materials in integrated circuit chip-carrier structures for electronic packages. An integrated circuit chip is electrically connected to a substrate. A thermostabilization unit is physically connected to the integrated circuit chip and the substrate. The thermostabilization unit comprises a temperature detector and magnetocaloric material on the integrated circuit chip. The integrated circuit structure includes a magnetic field generator operatively connected to the temperature detector. The magnetic field generator generates a magnetic field of variable intensity responsive to changes in temperature detected by the temperature detector.

    Abstract translation: 装置和方法将磁热材料结合在用于电子封装的集成电路芯片 - 载体结构中。 集成电路芯片电连接到基板。 热稳定单元物理地连接到集成电路芯片和基板。 热稳定单元包括集成电路芯片上的温度检测器和磁热材料。 集成电路结构包括可操作地连接到温度检测器的磁场发生器。 响应于由温度检测器检测到的温度变化,磁场发生器产生可变强度的磁场。

    TEMPERATURE STABILIZATION IN SEMICONDUCTORS USING THE MAGNETOCALORIC EFFECT
    5.
    发明申请
    TEMPERATURE STABILIZATION IN SEMICONDUCTORS USING THE MAGNETOCALORIC EFFECT 有权
    使用磁共振效应的半导体中的温度稳定性

    公开(公告)号:US20140223922A1

    公开(公告)日:2014-08-14

    申请号:US13766846

    申请日:2013-02-14

    Abstract: Apparatus and methods incorporate magnetocaloric materials in integrated circuit chip-carrier structures for electronic packages. An integrated circuit chip is electrically connected to a substrate. A thermostabilization unit is physically connected to the integrated circuit chip and the substrate. The thermostabilization unit comprises a temperature detector and magnetocaloric material on the integrated circuit chip. The integrated circuit structure includes a magnetic field generator operatively connected to the temperature detector. The magnetic field generator generates a magnetic field of variable intensity responsive to changes in temperature detected by the temperature detector.

    Abstract translation: 装置和方法将磁热材料结合在用于电子封装的集成电路芯片 - 载体结构中。 集成电路芯片电连接到基板。 热稳定单元物理地连接到集成电路芯片和基板。 热稳定单元包括集成电路芯片上的温度检测器和磁热材料。 集成电路结构包括可操作地连接到温度检测器的磁场发生器。 响应于由温度检测器检测到的温度变化,磁场发生器产生可变强度的磁场。

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