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公开(公告)号：US11542154B2
公开(公告)日：2023-01-03
申请号：US17206079
申请日：2021-03-18
Applicant: InvenSense, Inc.
Inventor： Ashfaque Uddin , Daesung Lee , Alan Cuthbertson
Abstract: A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.
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Patent Agency Ranking
公开(公告)号：US20220380209A1
公开(公告)日：2022-12-01
申请号：US17334493
申请日：2021-05-28
Applicant: InvenSense, Inc.
Inventor： Ashfaque Uddin , Daesung Lee , Alan Cuthbertson
Abstract: A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.
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公开(公告)号：US20230100960A1
公开(公告)日：2023-03-30
申请号：US18071322
申请日：2022-11-29
Applicant: InvenSense, Inc.
Inventor： Ashfaque Uddin , Daesung Lee , Alan Cuthbertson
Abstract: A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electromechanical system (MEMS) device pattern is etched into the device wafer.
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公开(公告)号：US11919769B2
公开(公告)日：2024-03-05
申请号：US18071322
申请日：2022-11-29
Applicant: InvenSense, Inc.
Inventor： Ashfaque Uddin , Daesung Lee , Alan Cuthbertson
CPC classification number: B81C1/00238 , B81B7/008 , B81C2201/013 , B81C2203/035
Abstract: A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.
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公开(公告)号：US11731871B2
公开(公告)日：2023-08-22
申请号：US17334493
申请日：2021-05-28
Applicant: InvenSense, Inc.
Inventor： Ashfaque Uddin , Daesung Lee , Alan Cuthbertson
CPC classification number: B81C1/00801 , B81B3/001 , B81B7/0025 , B81B7/02 , B81C1/00968 , B81B2201/0235 , B81B2201/0242 , B81B2203/0127 , B81B2207/012 , B81C2201/014 , B81C2201/0132 , B81C2203/036 , B81C2203/0792
Abstract: A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.
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公开(公告)号：US20220298009A1
公开(公告)日：2022-09-22
申请号：US17206079
申请日：2021-03-18
Applicant: InvenSense, Inc.
Inventor： Ashfaque Uddin , Daesung Lee , Alan Cuthbertson
Abstract: A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.
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