公开(公告)号：US20160307798A1

公开(公告)日：2016-10-20

申请号：US15195641

申请日：2016-06-28

Applicant: Invensas Corporation

Inventor： Cyprian Emeka UZOH ,  Belgacem HABA ,  Craig MITCHELL

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC classification number: H01L23/528 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/1094 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a top surface and portions of the side walls of the interconnect structure covered in a dissimilar material. In some embodiments, the dissimilar material can be a conductive material or a nano-alloy. The interconnect structure can be formed by removing a portion of the interconnect structure, and covering the interconnect structure with the dissimilar material. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure.

Abstract translation: 提供了用于形成半导体器件的方法和装置，其可以包括任何数量的特征。 一个特征是形成互连结构的方法，其导致互连结构具有覆盖在不同材料中的互连结构的顶表面和侧壁的部分。 在一些实施例中，异种材料可以是导电材料或纳米合金。 互连结构可以通过去除互连结构的一部分并且用不同材料覆盖互连结构来形成。 互连结构可以包括镶嵌结构，例如单镶嵌结构或双镶嵌结构，或者可以包括硅通孔（TSV）结构。