公开(公告)号：US20110005920A1

公开(公告)日：2011-01-13

申请号：US12502139

申请日：2009-07-13

申请人： Ivan Petrov Ivanov ,  Antoine Khoueir ,  Wei Tian ,  Paul E. Anderson ,  Lili Jia ,  Yongchul Ahn ,  Michael Xuefei Tang ,  Yang Dong

发明人： Ivan Petrov Ivanov ,  Antoine Khoueir ,  Wei Tian ,  Paul E. Anderson ,  Lili Jia ,  Yongchul Ahn ,  Michael Xuefei Tang ,  Yang Dong

IPC分类号： C23C14/35

CPC分类号： C23C14/0641 ,  C23C14/354 ,  C23C14/541 ,  H01J37/3408 ,  H01J37/3467

摘要： Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate.

摘要翻译： 本发明的各种实施方案通常涉及用于材料的非晶薄膜层的低温物理气相沉积（PVD）的衬底上的装置和方法。 PVD室被配置为支撑衬底并且具有阴极靶，其上具有溅射材料层，阳极屏蔽和与靶相邻的磁控管组件。 高冲击功率磁控溅射（HiPIMS）电源耦合到PVD室，电源具有充电电路和电荷存储装置。 电源对磁控管组件施加相当高的能量，低占空比脉冲，以通过自电离等离子体溅射来自溅射材料层的相对低能量的离子，以将非晶薄膜层沉积到衬底上。

公开(公告)号：US08193089B2

公开(公告)日：2012-06-05

申请号：US12502220

申请日：2009-07-13

申请人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyan Huang ,  Ivan Petrov Ivanov

发明人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyan Huang ,  Ivan Petrov Ivanov

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/76862

摘要： Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.

摘要翻译： 本发明的各种实施例通常涉及在半导体器件中形成导电通孔的方法。 通过使用原子层沉积在凹部内的多个金属阻挡层上沉积钨晶种层而形成的通孔塞电连接第一和第二金属层。 然后使用化学气相沉积用凹槽填充钨。

公开(公告)号：US20110006436A1

公开(公告)日：2011-01-13

申请号：US12502220

申请日：2009-07-13

申请人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyuan Huang ,  Ivan Petrov Ivanov

发明人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyuan Huang ,  Ivan Petrov Ivanov

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/76846 ,  H01L21/76862

摘要： Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.

摘要翻译： 本发明的各种实施例通常涉及在半导体器件中形成导电通孔的方法。 通过使用原子层沉积在凹部内的多个金属阻挡层上沉积钨晶种层而形成的通孔塞电连接第一和第二金属层。 然后使用化学气相沉积用凹槽填充钨。

公开(公告)号：US08039394B2

公开(公告)日：2011-10-18

申请号：US12492206

申请日：2009-06-26

申请人： Ivan Petrov Ivanov ,  Wei Tian ,  Mallika Kamarajugadda ,  Paul E. Anderson

发明人： Ivan Petrov Ivanov ,  Wei Tian ,  Mallika Kamarajugadda ,  Paul E. Anderson

IPC分类号： H01L21/44

CPC分类号： H01L21/76846 ,  C23C14/024 ,  C23C14/16 ,  C23C14/34 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.

摘要翻译： 一种在衬底上形成α钽层的方法，包括以下步骤：在衬底上沉积氮化钛层; 以及在所述氮化钛层上沉积一层α-钽，其中所述α-钽的沉积在低于约300℃的温度下进行。

公开(公告)号：US20100330800A1

公开(公告)日：2010-12-30

申请号：US12492206

申请日：2009-06-26

申请人： Ivan Petrov Ivanov ,  Wei Tian ,  Mallika Kamarajugadda ,  Paul E. Anderson

发明人： Ivan Petrov Ivanov ,  Wei Tian ,  Mallika Kamarajugadda ,  Paul E. Anderson

IPC分类号： H01L21/768 ,  B05D1/36 ,  C23C14/24 ,  C23C16/50 ,  C23C16/515 ,  C23C14/34 ,  C23C14/38

CPC分类号： H01L21/76846 ,  C23C14/024 ,  C23C14/16 ,  C23C14/34 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.

摘要翻译： 一种在衬底上形成α钽层的方法，包括以下步骤：在衬底上沉积氮化钛层; 以及在所述氮化钛层上沉积一层α-钽，其中所述α-钽的沉积在低于约300℃的温度下进行。

公开(公告)号：US08309945B2

公开(公告)日：2012-11-13

申请号：US13396731

申请日：2012-02-15

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L29/02

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US20120138884A1

公开(公告)日：2012-06-07

申请号：US13396731

申请日：2012-02-15

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L45/00

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US20100193758A1

公开(公告)日：2010-08-05

申请号：US12362532

申请日：2009-01-30

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L47/00 ,  H01L29/66 ,  H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US08288254B2

公开(公告)日：2012-10-16

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US20120142169A1

公开(公告)日：2012-06-07

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。