公开(公告)号：US09972970B2

公开(公告)日：2018-05-15

申请号：US15120254

申请日：2015-02-24

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Susumu Noda ,  Takuya Inoue ,  Takashi Asano ,  Menaka De Zoysa

IPC分类号： H01S3/04 ,  H01S3/097 ,  H01S5/183 ,  H01S5/02 ,  H01S5/024 ,  H01S5/10 ,  H01S5/34 ,  H01S5/00 ,  H01S5/042 ,  H01S5/30

CPC分类号： H01S5/18319 ,  H01S5/0014 ,  H01S5/0207 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0428 ,  H01S5/105 ,  H01S5/18316 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3402 ,  H01S5/3419 ,  H01S2302/02

摘要： A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.