公开(公告)号：US20140355630A1

公开(公告)日：2014-12-04

申请号：US14370997

申请日：2013-03-08

Applicant: Japan Science and Technology Agency

Inventor： Yasushi Takahashi ,  Yoshitaka Inui ,  Takashi Asano ,  Susumu Noda ,  Masahiro Chihara

IPC: G02B6/122 ,  G02B6/13 ,  H01S3/30

CPC classification number: G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02F1/025 ,  G02F1/365 ,  G02F2202/10 ,  G02F2202/32 ,  G02F2203/15 ,  H01S3/0635 ,  H01S3/0637 ,  H01S3/09415 ,  H01S3/30

Abstract: A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.

Abstract translation: 一种拉曼散射光增强装置，包括设置在其中形成有孔（20a）的半导体衬底的光子晶体（20）中的波导。 波导具有相对于多个频率的入射光的谐振模式。 一个谐振模式和另一谐振模式之间的频率差等于半导体衬底的拉曼移位频率。 设置相对于半导体衬底的晶面取向的波导形成方向，以使由两个谐振模式的电磁场分布和半导体衬底的拉曼张量表示的拉曼转移概率最大化。

公开(公告)号：US20160261093A1

公开(公告)日：2016-09-08

申请号：US14773584

申请日：2014-02-25

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu Noda ,  Tsuyoshi Okino ,  Kyoko Kitamura ,  Yoshinori Tanaka ,  Yong Liang

IPC: H01S5/18 ,  H01S5/10 ,  H01S5/042

CPC classification number: H01S5/18 ,  H01S3/0085 ,  H01S3/10 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/1215 ,  H01S2301/18

Abstract: A two-dimensional photonic crystal surface emitting laser has a laminated structure including: a two-dimensional photonic crystal (2DPC) layer in which refractive index distribution is formed by two-dimensionally arranging air holes in a plate-shaped base member; and an active layer for generating light with wavelength λL by receiving an injection of electric current. The two-dimensional photonic crystal surface emitting laser emits a laser beam in the direction of an inclination angle θ from normal to the 2DPC layer.

公开(公告)号：US09972970B2

公开(公告)日：2018-05-15

申请号：US15120254

申请日：2015-02-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu Noda ,  Takuya Inoue ,  Takashi Asano ,  Menaka De Zoysa

IPC: H01S3/04 ,  H01S3/097 ,  H01S5/183 ,  H01S5/02 ,  H01S5/024 ,  H01S5/10 ,  H01S5/34 ,  H01S5/00 ,  H01S5/042 ,  H01S5/30

CPC classification number: H01S5/18319 ,  H01S5/0014 ,  H01S5/0207 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0428 ,  H01S5/105 ,  H01S5/18316 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3402 ,  H01S5/3419 ,  H01S2302/02

Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

公开(公告)号：US09531160B2

公开(公告)日：2016-12-27

申请号：US14773584

申请日：2014-02-25

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu Noda ,  Tsuyoshi Okino ,  Kyoko Kitamura ,  Yoshinori Tanaka ,  Yong Liang

IPC: H01S5/00 ,  H01S5/18 ,  H01S5/042 ,  H01S5/10 ,  H01S3/00 ,  H01S3/10

CPC classification number: H01S5/18 ,  H01S3/0085 ,  H01S3/10 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/1215 ,  H01S2301/18

Abstract: A two-dimensional photonic crystal surface emitting laser has a laminated structure including: a two-dimensional photonic crystal (2DPC) layer in which refractive index distribution is formed by two-dimensionally arranging air holes in a plate-shaped base member; and an active layer for generating light with wavelength λL by receiving an injection of electric current. The two-dimensional photonic crystal surface emitting laser emits a laser beam in the direction of an inclination angle θ from normal to the 2DPC layer.

Abstract translation: 二维光子晶体表面发射激光器具有层叠结构，包括：二维光子晶体（2DPC）层，其中通过在板状基底构件中二维布置空气孔而形成折射率分布; 以及通过接收电流的注入而产生具有波长λL的光的有源层。 二维光子晶体表面发射激光器从垂直于2DPC层的倾斜角度θ的方向发射激光束。

公开(公告)号：US09627850B2

公开(公告)日：2017-04-18

申请号：US15050993

申请日：2016-02-23

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu Noda ,  Tsuyoshi Okino ,  Kyoko Kitamura ,  Yoshinori Tanaka ,  Yong Liang ,  Daiki Yasuda

IPC: H01S5/00 ,  H01S5/042 ,  H01S3/00 ,  H01S3/10 ,  H01S5/10 ,  H01S5/187 ,  H01S5/18 ,  H01S5/343

CPC classification number: H01S5/0425 ,  H01S3/0085 ,  H01S3/10 ,  H01S5/0071 ,  H01S5/105 ,  H01S5/18 ,  H01S5/187 ,  H01S5/34313 ,  H01S2301/18

Abstract: A two-dimensional photonic crystal surface emitting laser has a laminated structure including: a two-dimensional photonic crystal (2DPC) layer in which refractive index distribution is formed by two-dimensionally arranging air holes in a plate-shaped base member; and an active layer for generating light with wavelength λL by receiving an injection of electric current. The two-dimensional photonic crystal surface emitting laser emits a laser beam in the direction of an inclination angle θ from normal to the 2DPC layer.

公开(公告)号：US09097847B2

公开(公告)日：2015-08-04

申请号：US14370997

申请日：2013-03-08

Applicant: Japan Science and Technology Agency

Inventor： Yasushi Takahashi ,  Yoshitaka Inui ,  Takashi Asano ,  Susumu Noda ,  Masahiro Chihara

IPC: H01S3/30 ,  G02B6/122 ,  G02F1/365 ,  G02F1/025 ,  G02B6/13 ,  H01S3/063 ,  H01S3/0941

CPC classification number: G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02F1/025 ,  G02F1/365 ,  G02F2202/10 ,  G02F2202/32 ,  G02F2203/15 ,  H01S3/0635 ,  H01S3/0637 ,  H01S3/09415 ,  H01S3/30

Abstract: A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.

Abstract translation: 一种拉曼散射光增强装置，包括设置在其中形成有孔（20a）的半导体衬底的光子晶体（20）中的波导。 波导具有相对于多个频率的入射光的谐振模式。 一个谐振模式和另一谐振模式之间的频率差等于半导体衬底的拉曼移位频率。 设置相对于半导体衬底的晶面取向的波导形成方向，以使由两个谐振模式的电磁场分布和半导体衬底的拉曼张量表示的拉曼转移概率最大化。