公开(公告)号：US20170003592A1

公开(公告)日：2017-01-05

申请号：US15267840

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Masayoshi ISHIKAWA ,  Hiromitsu Tanaka ,  Tomoharu Kawazu ,  Junya Suzuki ,  Tomoaki Seko ,  Yoshio Takimoto

IPC: G03F7/09 ,  H01L21/311 ,  G03F7/075 ,  H01L21/027 ,  G03F7/40 ,  G03F7/16

CPC classification number: G03F7/094 ,  G03F7/0752 ,  G03F7/16 ,  G03F7/405 ,  G03F7/425 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group. SiX4   (1)

Abstract translation: 本发明是一种图案形成方法，其包括：在基板的一个表面上形成抗蚀剂下层膜的步骤; 在所述抗蚀剂下层膜的表面上形成含硅膜的步骤，所述表面位于所述基板侧表面的相反侧; 以及使用碱性水溶液除去含硅膜的工序。 该图案形成方法不包括在含硅膜形成步骤之后和含硅膜去除步骤之前使用含有酸或氟化合物的处理液来处理含硅膜的步骤。 优选含硅膜由含有式（1）表示的化合物的组合物的水解缩合物形成为全部硅化合物的60摩尔％以上的量。 SiX4（1）（式（1）中，X表示卤素原子或-OR2，R2表示一价有机基团。