公开(公告)号：US20220310381A1

公开(公告)日：2022-09-29

申请号：US17289491

申请日：2020-06-04

申请人： JX Nippon Mining & Metals Corporation

发明人： Shunsuke OKA ,  Hideki KURITA ,  Kenji SUZUKI

IPC分类号： H01L21/02 ,  H01L29/20 ,  B28D5/04 ,  C30B33/10 ,  C30B29/40 ,  C30B25/18

摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a WARP value of 3.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.

公开(公告)号：US20220208549A1

公开(公告)日：2022-06-30

申请号：US17600226

申请日：2020-12-23

申请人： JX Nippon Mining & Metals Corporation

发明人： Shunsuke OKA ,  Kenji SUZUKI ,  Hideaki HAYASHI

IPC分类号： H01L21/304 ,  H01L21/02

摘要： Provided is an indium phosphide substrate which has suppressed sharpness of a wafer edge when polishing is carried out from the back surface of the wafer by a method such as back lapping. An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°

公开(公告)号：US20220310382A1

公开(公告)日：2022-09-29

申请号：US17289524

申请日：2020-06-04

申请人： JX Nippon Mining & Metals Corporation

发明人： Shunsuke OKA ,  Hideki KURITA ,  Kenji SUZUKI

IPC分类号： H01L21/02 ,  H01L29/20 ,  B28D5/04 ,  C30B33/10 ,  C30B29/40 ,  C30B25/18

摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.

公开(公告)号：US20230378274A1

公开(公告)日：2023-11-23

申请号：US18031060

申请日：2021-10-07

申请人： JX NIPPON MINING & METALS CORPORATION

发明人： Kodai YAMAGISHI ,  Shunsuke OKA ,  Kenji SUZUKI

IPC分类号： H01L29/20 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L29/20 ,  H01L21/02021 ,  H01L21/02024 ,  C30B25/186 ,  H01L21/02019 ,  C30B29/40

摘要： Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing cracks in indium phosphide substrates caused by edge irregularities and processing damage. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a maximum height Sz of 2.1 μm or less, as measured by a laser microscopy on the entire surface of the edge part.

公开(公告)号：US20230082020A1

公开(公告)日：2023-03-16

申请号：US17787197

申请日：2022-03-07

申请人： JX Nippon Mining & Metals Corporation

发明人： Shunsuke OKA ,  Kenji SUZUKI

IPC分类号： C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  H01L21/304 ,  C30B33/10

摘要： An indium phosphide substrate, the phosphide substrate has an angle θ on the main surface side of 0°

公开(公告)号：US20220316092A1

公开(公告)日：2022-10-06

申请号：US17289455

申请日：2020-06-04

申请人： JX Nippon Mining & Metals Corporation

发明人： Shunsuke OKA ,  Hideki KURITA ,  Kenji SUZUKI

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  C30B33/10

摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a SORI value of 2.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.

公开(公告)号：US20230392289A1

公开(公告)日：2023-12-07

申请号：US18034327

申请日：2021-10-07

申请人： JX Nippon Mining & Metals Corporation

发明人： Kodai YAMAGISHI ,  Shunsuke OKA ,  Kenji SUZUKI

IPC分类号： C30B29/40 ,  H01L29/20 ,  H01L21/02 ,  C30B25/18

CPC分类号： C30B29/40 ,  H01L29/20 ,  H01L21/02021 ,  H01L21/02024 ,  H01L21/02019 ,  H01L21/02392 ,  C30B25/186

摘要： Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing an occurrence of contamination of the surface of the indium phosphide substrate caused by residues at the edge part. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a root mean square height Sq of 0.15 μm or less, as measured by a laser microscopy on the entire surface of the edge part.