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1.发明授权High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution 有权在低温水溶液中生长的多个表面上由氧化锌层覆盖的高亮度发光二极管公开(公告)号：US08637334B2
公开(公告)日：2014-01-28
申请号：US12938948
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
摘要翻译： 一种高亮度III-Nitride型发光二极管（LED），包括由氧化锌（ZnO）层覆盖的多个表面，其中ZnO层在低温水溶液中生长，并且各自具有（0001）c取向和 （0001）面的顶面。
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2.发明申请HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION 有权在低温水溶液中生成的多个表面上的氧化锌层覆盖的高亮度发光二极管公开(公告)号：US20110266551A1
公开(公告)日：2011-11-03
申请号：US12938948
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
摘要翻译： 一种高亮度III-Nitride型发光二极管（LED），包括由氧化锌（ZnO）层覆盖的多个表面，其中ZnO层在低温水溶液中生长，并且各自具有（0001）c取向和 （0001）面的顶面。
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3.发明授权Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays 有权在一个或多个表面上使用氧化锌纳米棒阵列的发光二极管结构和制造这种氧化锌纳米棒阵列的低成本方法公开(公告)号：US08536618B2
公开(公告)日：2013-09-17
申请号：US12938872
申请日：2010-11-03
申请人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
发明人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/36
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
摘要翻译： 一种制备具有改进的光提取效率的发光二极管的方法，包括通过从水溶液中生长ZnO纳米棒，在III-氮化物基LED的一个或多个表面上沉积多个氧化锌（ZnO）纳米棒，其中 表面与III型氮化物的c面不同，透过LED产生的光。
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4.发明申请LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS 有权在一个或多个表面上使用氧化锌纳米级阵列的发光二极管结构，以及生产这种氧化锌纳米棒阵列的低成本方法公开(公告)号：US20110108873A1
公开(公告)日：2011-05-12
申请号：US12938872
申请日：2010-11-03
申请人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
发明人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
摘要翻译： 一种制备具有改进的光提取效率的发光二极管的方法，包括通过从水溶液中生长ZnO纳米棒，在III-氮化物基LED的一个或多个表面上沉积多个氧化锌（ZnO）纳米棒，其中 表面与III型氮化物的c面不同，透过LED产生的光。
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公开(公告)号：US09653655B2
公开(公告)日：2017-05-16
申请号：US12939044
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Jin Hyeok Kim , MaryAnn E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , Jin Hyeok Kim
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
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6.发明申请LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION 有权具有氧化锌电流扩散和光提取层的发光二极管从低温水溶液中沉积公开(公告)号：US20110101414A1
公开(公告)日：2011-05-05
申请号：US12939044
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
发明人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
摘要翻译： 一种制造具有提高光提取效率的发光二极管（LED）的方法，包括提供包括p型层和n型层之间的发光有源层的基于III氮化物的LED结构; 通过将p型层的表面浸没在低温水溶液中，在p型层上外延生长氧化锌（ZnO）层，其中ZnO层是透明电流扩散层; 以及在ZnO层上沉积p型接触。 效率的提高可能超过93％，成本很少或没有增加。
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7.发明申请LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS 有权ZnO薄膜，纳米结构和块状单晶的水性合成的低温连续循环反应器公开(公告)号：US20100263586A1
公开(公告)日：2010-10-21
申请号：US12761246
申请日：2010-04-15
摘要： A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
摘要翻译： 一种合成ZnO的方法，包括在包含ZnO源材料的含有底物或种子的较热沉积区和较冷的溶解区之间连续循环ZnO饱和的生长溶液。
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8.发明授权Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals 有权低温连续循环反应器，用于ZnO薄膜，纳米结构和体单晶的水合成公开(公告)号：US08668774B2
公开(公告)日：2014-03-11
申请号：US12761246
申请日：2010-04-15
IPC分类号： C30B19/00
摘要： A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
摘要翻译： 一种合成ZnO的方法，包括在包含ZnO源材料的含有底物或种子的较热沉积区和较冷的溶解区之间连续循环ZnO饱和的生长溶液。
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