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    Method of forming floating gate, non-volatile memory device using the same, and fabricating method thereof
    1.
    发明授权
    Method of forming floating gate, non-volatile memory device using the same, and fabricating method thereof 有权
    形成浮栅的方法，使用其的非易失性存储器件及其制造方法

    公开(公告)号：US07897458B2

    公开(公告)日：2011-03-01

    申请号：US12076878

    申请日：2008-03-25

    申请人： Jaegab Lee ,  Jang-Sik Lee ,  Chi Young Lee ,  Byeong Hyeok Sohn

    发明人： Jaegab Lee ,  Jang-Sik Lee ,  Chi Young Lee ,  Byeong Hyeok Sohn

    IPC分类号： H01L21/336

    CPC分类号： H01L29/42324 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/513

    摘要： Provided is a method of forming a floating gate, a non-volatile memory device using the same, and a method of fabricating the non-volatile memory device, in which nano-crystals of nano-size whose density and size can be easily adjusted, are synthesized using micelles so as to be used as the floating gate of the non-volatile memory device. The floating gate is fabricated by forming a tunnel oxide film on the semiconductor substrate, coating a gate formation solution on the tunnel oxide film in which the gate formation solution includes micelle templates into which precursors capable of synthesizing metallic salts in nano-structures formed by a self-assembly method are introduced, and arranging the metallic salts on the tunnel oxide film by removing the micelle templates, to thereby form the floating gate.

    摘要翻译： 提供了一种形成浮动栅极的方法，使用该浮动栅极的非易失性存储器件，以及制造非易失性存储器件的方法，其中可以容易地调节其密度和尺寸的纳米尺寸纳米晶体， 使用胶束合成以便用作非易失性存储器件的浮动栅极。 通过在半导体衬底上形成隧道氧化膜来制造浮栅，在隧道氧化膜上涂覆栅极形成溶液，其中栅极形成溶液包含胶束模板，其中能够由纳米结构形成的纳米结构中的金属盐合成前体 引入自组装方法，并通过去除胶束模板将金属盐布置在隧道氧化物膜上，从而形成浮栅。

    Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof
    3.
    发明授权
    Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof 有权
    具有多个电荷存储层的浮动栅极，制造浮动栅极的方法，使用其的非易失性存储器件及其制造方法

    公开(公告)号：US07745874B2

    公开(公告)日：2010-06-29

    申请号：US11907639

    申请日：2007-10-16

    申请人： Jang-Sik Lee ,  Jinhan Cho ,  Jaegab Lee

    发明人： Jang-Sik Lee ,  Jinhan Cho ,  Jaegab Lee

    IPC分类号： H01L29/792

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42348 ,  H01L29/513

    摘要： Provided is a floating gate having multiple charge storing layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storing layers using metal nano-crystals of nano size is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-crystal film which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of metal nano-crystals for trapping charges are deposited. The floating gate is made by self-assembling the metal nano-crystals on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.

    摘要翻译： 提供了具有多个电荷存储层的浮动栅极，使用该浮置栅极的非易失性存储器件以及制造浮置栅极和非易失性存储器件的方法，其中使用金属纳米晶体的多个电荷存储层 形成纳米尺寸，从而增强存储器件的电荷存储容量。 浮栅包括沉积在隧道氧化膜上的聚合物电解质膜，并且由至少一个阶段形成，其中至少一个薄膜沉积在每个载物台上，以及至少一个自身的金属纳米晶体膜 组装在聚合物电解质膜的每个阶段的上表面上，并沉积许多用于捕获电荷的金属纳米晶体。 浮栅是通过在聚合物电解膜上自组装金属纳米晶体制成的，因此可以在高温下不经受热处理工艺而制造。

    Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof
    4.
    发明授权
    Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof 有权
    具有多个电荷存储层的浮动栅极，制造浮动栅极的方法，使用其的非易失性存储器件及其制造方法

    公开(公告)号：US08268711B2

    公开(公告)日：2012-09-18

    申请号：US12791253

    申请日：2010-06-01

    申请人： Jang-Sik Lee ,  Jinhan Cho ,  Jaegab Lee

    发明人： Jang-Sik Lee ,  Jinhan Cho ,  Jaegab Lee

    IPC分类号： H01L21/3205

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42348 ,  H01L29/513

    摘要： Provided is a floating gate having multiple charge storage layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storage layers using metallic/semiconducting nano-particles is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-particle layer which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of nano-particles for trapping charges are formed. The floating gate is made by self-assembling the nano-particles on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.

    摘要翻译： 提供了具有多个电荷存储层的浮动栅极，使用该电荷存储层的非易失性存储器件以及制造浮置栅极和非易失性存储器件的方法，其中使用金属/半导体纳米 - 形成颗粒从而增强存储器件的电荷存储容量。 浮栅包括沉积在隧道氧化物膜上的聚合物电解质膜，并且由至少一个阶段形成，其中至少一个薄膜沉积在每个阶段上，以及至少一个自身的金属纳米颗粒层 组装在聚合物电解膜的每个阶段的上表面上，并形成许多用于捕获电荷的纳米颗粒。 浮栅是通过在聚合物电解膜上自组装纳米颗粒而制成的，因此可以在高温下不经受热处理工艺而制造。

    Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof
    5.
    发明申请
    Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof 有权
    具有多个电荷存储层的浮动栅极，制造浮动栅极的方法，使用其的非易失性存储器件及其制造方法

    公开(公告)号：US20090085094A1

    公开(公告)日：2009-04-02

    申请号：US11907639

    申请日：2007-10-16

    申请人： Jang-Sik Lee ,  Jinhan Cho ,  Jaegab Lee

    发明人： Jang-Sik Lee ,  Jinhan Cho ,  Jaegab Lee

    IPC分类号： H01L29/788 ,  H01L21/28

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42348 ,  H01L29/513

    摘要： Provided is a floating gate having multiple charge storing layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storing layers using metal nano-crystals of nano size is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-crystal film which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of metal nano-crystals for trapping charges are deposited. The floating gate is made by self-assembling the metal nano-crystals on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.

    摘要翻译： 提供了具有多个电荷存储层的浮动栅极，使用该浮置栅极的非易失性存储器件以及制造浮置栅极和非易失性存储器件的方法，其中使用金属纳米晶体的多个电荷存储层 形成纳米尺寸，从而增强存储器件的电荷存储容量。 浮栅包括沉积在隧道氧化膜上的聚合物电解质膜，并且由至少一个阶段形成，其中至少一个薄膜沉积在每个载物台上，以及至少一个自身的金属纳米晶体膜 组装在聚合物电解质膜的每个阶段的上表面上，并沉积许多用于捕获电荷的金属纳米晶体。 浮栅是通过在聚合物电解膜上自组装金属纳米晶体制成的，因此可以在高温下不经受热处理工艺而制造。