公开(公告)号：US06544867B1

公开(公告)日：2003-04-08

申请号：US09589756

申请日：2000-06-09

Applicant: James Brian Webb ,  Haipeng Tang

Inventor： James Brian Webb ,  Haipeng Tang

IPC: H01L2176

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631

Abstract: A method of growing semi-insulating GaN epilayers by ammonia-molecular beam epitaxy (MBE) through intentional doping with carbon is described. Thick GaN layers of high resistivity are an important element in GaN based heterostructure field-effect transistors. A methane ion source is preferably used as the carbon dopant source.

Abstract translation: 描述了通过氨分子束外延（MBE）生长半绝缘GaN外延层通过有意义的掺杂碳的方法。 GaN基异质结场效应晶体管的重要元素是高电阻厚GaN层。 甲烷离子源优选用作碳掺杂剂源。