公开(公告)号：US20050002267A1

公开(公告)日：2005-01-06

申请号：US10875082

申请日：2004-06-23

申请人： James Daughton ,  Arthur Pohm

发明人： James Daughton ,  Arthur Pohm

IPC分类号： G01R20060101 ,  G11C11/00 ,  G11C11/16 ,  H01L31/119

CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L43/10

摘要： A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.

摘要翻译： 一种基于铁磁性薄膜的数字存储器，其具有支撑位结构的衬底，其与信息存储和检索电路电互连并且具有磁性材料膜，其中特性磁性能基本上保持在相关临界温度以下，高于该磁性性质不是 保持由至少一层非磁性材料隔开，每个位结构具有互连结构，在其基本上平行于位于第一接触表面和衬底之间的中间层的接触表面处提供电接触。 位于相对应的所述位结构的中间层的相对侧上的相应一个位结构的多个字线结构与其互连结构提供电接触。 通过这些位结构及其互连结构中的每一个选择性地拉出的足够的电流可以引起该位结构的显着加热以升高其温度，使其中的至少一个磁性材料膜至少接近其对应的相关临界温度，同时基本上高于 至少相邻的位结构的温度由于足够的热隔离。

公开(公告)号：US20070109842A1

公开(公告)日：2007-05-17

申请号：US11651729

申请日：2007-01-10

申请人： James Daughton ,  Arthur Pohm

发明人： James Daughton ,  Arthur Pohm

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

摘要： A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

公开(公告)号：US20070268743A1

公开(公告)日：2007-11-22

申请号：US11881097

申请日：2007-07-25

申请人： James Daughton ,  Arthur Pohm

发明人： James Daughton ,  Arthur Pohm

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

摘要： A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

公开(公告)号：US20060083056A1

公开(公告)日：2006-04-20

申请号：US11292635

申请日：2005-12-02

申请人： James Daughton ,  Arthur Pohm

发明人： James Daughton ,  Arthur Pohm

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

摘要： A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

摘要翻译： 一种基于铁磁性薄膜的数字存储器，其中具有磁性材料膜的位结构，其中磁性材料膜的磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，每个具有 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

公开(公告)号：US20050242382A1

公开(公告)日：2005-11-03

申请号：US11116874

申请日：2005-04-28

申请人： James Daughton ,  James Deak ,  Arthur Pohm

发明人： James Daughton ,  James Deak ,  Arthur Pohm

IPC分类号： H01L21/8246 ,  H01L27/22 ,  H01L29/94

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/224 ,  H01L43/10

摘要： A ferromagnetic thin-film based digital memory having a substrate formed of a base supporting an electrically insulating material primary substrate layer in turn supporting a plurality of current control devices each having an interconnection arrangement with each of said plurality of current control devices being separated from one another by spacer material therebetween and being electrically interconnected with information storage and retrieval circuitry. A plurality of bit structures are each supported on and electrically connected to a said interconnection arrangement of a corresponding one of said plurality of current control devices and have magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained of which two are separated by at least one intermediate layer of a nonmagnetic material having two major surfaces on opposite sides thereof. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection arrangement supporting that bit structure. Sufficient electrical current selectively drawn through each of these bit structures as interconnected can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.

摘要翻译： 一种基于铁磁薄膜的数字存储器，其具有由支撑电绝缘材料主基底层的基底形成的基底，其又支撑多个电流控制装置，每个电流控制装置具有与所述多个电流控制装置中的每一个的互连装置， 另一个通过其间的间隔物材料并且与信息存储和检索电路电互连。 多个位结构分别被支撑在所述多个电流控制装置中的对应的一个电流控制装置的所述互连装置上并与其电连接，并且具有磁性材料膜，其中特性磁性能基本上保持在相关的临界温度以下， 磁性不保持，其中两个被至少一个在其相对侧上具有两个主表面的非磁性材料的中间层隔开。 多个字线结构，位于相对应的所述位结构的中间层的相对侧上的对应的一个位线结构，以及支撑该位结构的互连布置。 通过互连的这些位结构中的每一个选择性地抽出足够的电流可引起该位结构的实质加热以升高其温度，使其中的至少一个磁性材料膜至少接近其对应的相关临界温度，同时基本上高于 至少相邻的所述位结构由于足够的热隔离。

公开(公告)号：US20070206342A1

公开(公告)日：2007-09-06

申请号：US11308081

申请日：2006-03-06

申请人： Andrew Tipton ,  Arthur Pohm ,  Carl Tipton

发明人： Andrew Tipton ,  Arthur Pohm ,  Carl Tipton

IPC分类号： H01G4/20

CPC分类号： H01G4/18 ,  H01G4/206 ,  H01G9/028 ,  H01G9/038 ,  H01G11/56 ,  Y02E60/13 ,  Y02T10/7022

摘要： A solid-state, low-voltage, non-linear nano-capacitor is described comprising a self-organized monolayer between two electrodes. The monolayer comprises an electron donor and electron acceptor separated by a conjugated bridge.

摘要翻译： 描述了固态，低电压，非线性纳米电容器，其包括两个电极之间的自组织单层。 单层包括由共轭桥隔开的电子给体和电子受体。

公开(公告)号：US20060291278A1

公开(公告)日：2006-12-28

申请号：US11308427

申请日：2006-03-23

申请人： Andrew Tipton ,  Arthur Pohm ,  Carl Tipton

发明人： Andrew Tipton ,  Arthur Pohm ,  Carl Tipton

IPC分类号： G11C11/56

CPC分类号： H01L23/427 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A display device is described comprising a first transparent electrode, a second electrode, and a pixel, wherein the pixel, in-between the first electrode and the second electrode, comprises a display molecule connected to a first surface, the display molecule comprises an electron donor, a conjugated bridge and an electron acceptor.

摘要翻译： 描述了包括第一透明电极，第二电极和像素的显示装置，其中在第一电极和第二电极之间的像素包括连接到第一表面的显示分子，显示分子包括电子 供体，共轭桥和电子受体。